Article contents
Ion Irradiation on Phase Change Materials
Published online by Cambridge University Press: 03 August 2011
Abstract
Ion irradiation with 130 keV Ge+ or 120 keV Sb+ has modified, by thermal spike effect, the local atomic arrangement in the structure of as-deposited sputtered amorphous GeTe and Ge2Sb2Te5 thin films. The changes in the local order have been analyzed by Raman and EXAFS spectroscopy. In addition the crystallization kinetic, measured by “in situ” time resolved reflectivity and optical microscope analysis, is found to be faster in the irradiated samples. The nucleation rate and the grain growth velocity are enhanced by a factor of about ten with respect to the unirradiated samples in the investigated temperature range (120°C –170°C).
- Type
- Research Article
- Information
- MRS Online Proceedings Library (OPL) , Volume 1354: Symposium II – Ion Beams—New Applications from Mesoscale to Nanoscale , 2011 , mrss11-1354-ii06-06
- Copyright
- Copyright © Materials Research Society 2011
References
REFERENCES
- 1
- Cited by