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Ion Irradiated Amorphous Silicon: A Model Approach to Dynamics of Defect Creation and Annihilation

Published online by Cambridge University Press:  21 February 2011

Jung H. Shin  and
Harry A. Atwater
Jung H. Shin
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
Harry A. Atwater
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
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Abstract

The dynamics of defect annihilation and creation in amorphous silicon (a-Si) are measured in detail using defect-related changes in the electrical conductivity of a-Si A model is proposed which for the first time can track the complete time evolution of defect population across the activation energy spectrum with explicit dependence on irradiation and annealing parameters. The model is based upon experimental activation energy spectrum, bimolecular recombination kinetics, and on the notion of a maximum density of defect states beyond which no additional defects can be supported. The new model predicts transient dynamics in defect population and describes structure of the defect population in detail. Its predictions are in good qualitative agreement, and in reasonable quantitative agreement with experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 311: Symposium O – Phase Transformations in Thin Films–Thermodynamics and Kinetics , 1993 , 221
Copyright
Copyright © Materials Research Society 1993

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