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Ion Implanted Strip Optical Waveguides in GaAs/GaAl as MQW Material

Published online by Cambridge University Press:  21 February 2011

B. L. Weiss  and
A. C. Wismayer
B. L. Weiss
Affiliation:
Department of Electrical and Electronic EngineeringUniversity of Surrey, Guildford, Surrey GU2 5XH, UK
A. C. Wismayer
Affiliation:
Department of Electrical and Electronic EngineeringUniversity of Surrey, Guildford, Surrey GU2 5XH, UK
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Abstract

This paper is the first report of the use of Si+ implantation into GaAs/GaAlAs MQW material to form optical waveguides operating at a wavelength of 1.15μm. Lateral confinement is achieved by mixing of the MQW material which is produced by the implantation of Si+ and subsequent annealing at 750°C. The properties of these waveguides are compared with those of chemically etched rib waveguides and are shown to have reasonably low losses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 83
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. Julien, F., Swanson, P.D., Emanuel, M.A., Deppe, D.G., DeTemple, T.A., Coleman, J.J. and Holonyuak, N., Appl. Phys. Lett. 50, 866, 1987.Google Scholar
2. Ralston, J.D., Camnitz, L.H., Wicks, G.W. and Eastman, L.F., Inst. Phys. Conf. Ser. No. 83, 367, 1987.Google Scholar
3. Schwarz, S.A., Venkatesan, T., Bhat, R., Koza, M., Yoon, H.W., Arakawa, Y. and Mei, P., Mat. Res. Soc. Symp. Proc, 56, 321, 1986.CrossRefGoogle Scholar
4. Ishida, K., Matsui, K., Fukunaga, T., Takamori, T., Kobayashi, J., Ishida, K. and Nakashima, H., Inst. Phys. Conf. Ser. No. 83, 361, 1987.Google Scholar
5. Shail, R., Naden, J.M. and Weiss, B.L., Appl. Phys. Lett, 44, 828, 1984.Google Scholar
6. Henning, I.D. and Rogers, P.M., Electron. Lett. 23, 1245, 1987.Google Scholar