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Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing

Published online by Cambridge University Press:  01 February 2011

Roberta Nipoti ,
Alberto Carnera ,
Fabio Bergamini ,
Mariaconcetta Canino ,
Antonella Poggi ,
Sandro Solmi  and
Mara Passini
Roberta Nipoti
Affiliation:
[email protected], CNR, IMM, via Gobetti 101, Bologna, N/A, 40129, Italy
Alberto Carnera
Affiliation:
[email protected], Università di Padova, Dipartimento di Fisica G. Galilei, via Marzolo 8, Padova, N/A, 35131, Italy
Fabio Bergamini
Affiliation:
[email protected], CNR, IMM, via Gobetti 101, Bologna, N/A, 40129, Italy
Mariaconcetta Canino
Affiliation:
[email protected], Università di Bologna, Dipartimento di Fisica, viale Berti Pichat 6/2, Bologna, N/A, 40127, Italy
Antonella Poggi
Affiliation:
[email protected], CNR, IMM, via Gobetti 101, Bologna, N/A, 40129, Italy
Sandro Solmi
Affiliation:
[email protected], CNR, IMM, via Gobetti 101, Bologna, N/A, 40129, Italy
Mara Passini
Affiliation:
[email protected], CNR, IMM, via Gobetti 101, Bologna, N/A, 40129, Italy
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Abstract

Structural, morphological and electrical characteristics of Al-implanted p+/n 4H-SiC diodes are compared for the same implantation process and post implantation annealing with identical stationary and cooling cycles but different heating velocity. Al+ ions were implanted at 400°C, with energies in the range 250-350 keV and total fluence of 1.2×1015 cm−2. Post implantation annealing processes were done at 1600°C for 30 min with a constant heating velocity in the range 7 – 40°C/sec and an abrupt cooling cycle. Gas in the annealing ambient was high purity Ar. The Al depth profile of annealed and as implanted samples were equal except for concentrations below 10E17 cm−3 where the former profiles showed a diffusion tail. With the increase of the heating velocity of the post implantation annealing process, sheet resistance of the Al implanted layer and diode leakage currents decrease while the surface roughness increases.

Keywords

ion-implantationannealingelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B11-01
Copyright
Copyright © Materials Research Society 2006

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References

1 Rao, M. V., Tucker, J. B., Ridgway, M. C., Holland, O. W., Papanicolaou, N. and Mittereder, J., J. Appl. Phys. 86, 752 (1999).Google Scholar
2 Negoro, Y., Miyamoto, N., Kimono, T. and Matsumani, H., Mater. Sci. Forum 389–393, 783 (2002).Google Scholar
3 Senzaki, J., Harada, S., Kosugi, R., Suzuki, S., Fukuda, K. and Arai, K., Mater. Sci. Forum 389–393, 795 (2002).Google Scholar
4 Ottaviani, L., Lzar, M., Locatelli, M. L., Monteil, Y., Heera, V., Voelskow, M. and Skorupa, W., Appl. Surf. Sci. 184, 330 (2001).Google Scholar
5 Nakamura, H., Watanabe, H., Yamazaki, J., Tanaka, N. and Malhan, R.K., Mater. Sci. Forum 389–393, 807 (2002).Google Scholar
6 Abe, K., Eryu, O., Kogi, O. and Nakashima, K., Nucl. Instr. and Meth. in Phys. Res. B 206, 960 (2003).Google Scholar
7 Wirth, H., Pankin, D., Skorupa, W. and Niemann, E., Appl. Phys. Lett. 74, 979 (1999).Google Scholar
8 Dutto, C., Fogarassy, E., Mathiot, D., Muller, D., kern, P., and Ballutaud, D., Appl. Surf. Sci. 208–209, 292 (2003).Google Scholar
9 CREE Research Inc., USAGoogle Scholar
10 SiC Furnace with 50 mm crucible, made by Jipelec, FranceGoogle Scholar
11 Nipoti, R., Moscatelli, F., Scorzoni, A., Poggi, A., Cardinali, G.C., Lazar, M., Raynaud, C., Planson, D., Locatelli, M.L. and Chante, J.P. in Silicon Carbide 2002 - Materials, Processing and Devices, edited by Saddow, Stephen E., Larkin, David J., Sacks, Nelson S. and Shöner, Adolf (Mat. Res. Soc. Proc. 742, Warrendale, PA, 2003) pp. 303–308.Google Scholar
12 Blanqué, S., Perez, R., Mestres, N., Contreras, S., Camassel, J. and Godignon, P., Proceedings of ICSCRM 2005, to be publish in Mater. Sci. Forum (2006).Google Scholar
13 Negoro, Y., Kimoto, T., and Matsunami, H., J. Appl. Phys. 98, 043709 (2005).Google Scholar
14 Heera, V., Panknin, D. and Skorupa, W., Appl. Surf. Sci. 184, 307 (2001).Google Scholar
15 Raineri, V., Calcagno, L., Giannazzo, F., Goghero, D., Musumeci, F., Roccaforte, F. and Via, F. La, Mater. Sci. Forum 433–436, 375 (2003).Google Scholar
16 Pawlak, B. J., Vandervorst, W., Smith, A. J., Cowern, N. E. B., Colombeau, B., and Pages, X., Appl. Phys. Lett. 86, 101913 (2005).Google Scholar
17 Nipoti, R., Bergamini, F., Moscatelli, F., Poggi, A., e, M. Canino Bertuccio, G., Proceedings of ICSCRM 2005, Mater. Sci. Forum (2006) in press.Google Scholar