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Ion Implanted Calibration Standards for Si Surface Contamination Detection by Txrf

Published online by Cambridge University Press:  21 February 2011

D. C. Jacobson ,
J. M. Poate ,
G. S. Higashi ,
T. Boone ,
D. J. Eaglesham  and
Richard Hocketi
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974.
J. M. Poate
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974.
G. S. Higashi
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974.
T. Boone
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974.
D. J. Eaglesham
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974.
Richard Hocketi
Affiliation:
Evans and Associates Inc., 301 Chesapeake Drive, Redwood City, CA 94063.
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Abstract

As Si device features shrink, the detection and removal of surface contamination becomes increasingly important. Transition metal contamination is a very serious problem. Line widths less than half a micron require such surface contamination to be less than 1 × 1010 atoms/cm2 if reliable gate oxides are to be fabricated. Total Reflection X-ray Fluorescence (TXRF) is the analytical tool of choice for these very low concentrations of surface contamination. We describe a technique for producing reliable surface contamination standards for TXRF utilizing ion implantation into amorphous Si and zone refining of the implanted impurity to the surface of the wafer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 347
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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