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Ion Implantation of KnbO3 and LiNbO3 at Elevated Temperatures

Published online by Cambridge University Press:  25 February 2011

C H. Buchal ,
R. Irmscher  and
P. Günter
C H. Buchal
Affiliation:
KFA-ISI, D-5170 Jilich, W. Germany
R. Irmscher
Affiliation:
KFA-ISI, D-5170 Jilich, W. Germany
P. Günter
Affiliation:
ETH Hönggerberg, CH-8093 Zürich, Switzerland
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Abstract

Ion implantation, annealing and channeling of single crystalline samples of KnbO3 and LiNbO3 have been studied. Raising the substrate temperature above 600 K, greatly increases the tolerance of the crystals for high-dose implantation. In LiNbO3 dynamic recrystallization has been observed for the first time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 719
Copyright
Copyright © Materials Research Society 1989

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References

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