Hostname: page-component-7bb8b95d7b-5mhkq Total loading time: 0 Render date: 2024-09-13T03:39:21.087Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion Implantation of KnbO3 and LiNbO3 at Elevated Temperatures

Published online by Cambridge University Press:  25 February 2011

C H. Buchal ,
R. Irmscher  and
P. Günter
C H. Buchal
Affiliation:
KFA-ISI, D-5170 Jilich, W. Germany
R. Irmscher
Affiliation:
KFA-ISI, D-5170 Jilich, W. Germany
P. Günter
Affiliation:
ETH Hönggerberg, CH-8093 Zürich, Switzerland
Get access

Abstract

Ion implantation, annealing and channeling of single crystalline samples of KnbO3 and LiNbO3 have been studied. Raising the substrate temperature above 600 K, greatly increases the tolerance of the crystals for high-dose implantation. In LiNbO3 dynamic recrystallization has been observed for the first time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 719
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Günter, P. (Edt.), Electrooptic and Photorefractive Materials, Springer Proc. in Phys. 18 (Berlin 1987).10.1007/978-3-642-71907-3CrossRefGoogle Scholar
2. Hunsperger, R.B., Integrated Optics: Theory and Technology (Springer, Berlin-New York, 1985).Google Scholar
3. Götz, G. Radiation Eff. 98, 189 (1986).10.1080/00337578608206111CrossRefGoogle Scholar
4. Townsend, P.D., Rep. Progr. Phys. 50, 501 (1987).10.1088/0034-4885/50/5/001CrossRefGoogle Scholar
5. Buchal, Ch. in: Structure-Property Relations in Ion-Beam Surface Modified Ceramics edt. McHargue, C.J. (Kluwer 1989).Google Scholar
6. Buchal, Ch., Ashley, P.R., Thomas, D.K., Appleton, B.R., Mat. Res. Soc. Symp. Proc. 88, 93 (1987).10.1557/PROC-88-93CrossRefGoogle Scholar
7. Ashley, P.R., Chang, W.S.C., Buchal, Ch., Thomas, D.K. to be publ. in IEEE Lightwave Techn. (1989).Google Scholar
8. Weis, R.S., Gaylord, T.K., Appl. Phys. A37, 191 (1985).10.1007/BF00614817CrossRefGoogle Scholar
9. Bremer, T. et al., Ferroelectr. Lett. 9, 11 (1988).CrossRefGoogle Scholar
10. Baumert, J., Walther, C., Buchmann, P., Melchior, H., Günter, P. in “Integrated Optics” edt. Nolting, H., Ulrich, R. (Springer, Berlin 1985) p.44 CrossRefGoogle Scholar
11. Biersack, J., Haggmark, L., Nucl. Instr. Meth. 174, 257 (1980) and recent updates of computer codes10.1016/0029-554X(80)90440-1CrossRefGoogle Scholar
12. Poker, D.B.,Thomas, D.K., Mat.Res.Soc.Symp.Proc. 100, 311(1988).10.1557/PROC-100-311CrossRefGoogle Scholar
13. Ellimann, R.G. et al., Nucl.Instr.Meth. B19/20, 435 (1987).10.1016/S0168-583X(87)80086-1CrossRefGoogle Scholar
14. White, A.E. et al., Appl.Phys.Lett. 50, 95 (1987).CrossRefGoogle Scholar
15. Kohlhof, K., Mantl, S., Stritzker, B., Jager, W., Nucl.Instr. Meth.B in print (1988/1989).Google Scholar
16. McHargue, C.J. et al., Nucl.Instr.Meth. B10/11, 569 (1985).10.1016/0168-583X(85)90310-6CrossRefGoogle Scholar
17. Buchal, Ch. and Bremer, T., to be published.Google Scholar