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Ion Implantation into Inp/InGaAs Heterostructures Grown by Movpe

Published online by Cambridge University Press:  21 February 2011

Wulf Häussler
Affiliation:
Siemens Research Laboratories, Otto-Hahn-Ring 6, 8000 München 83 Fed. Rep. Germany
J. W. Walter
Affiliation:
Siemens Research Laboratories, Otto-Hahn-Ring 6, 8000 München 83 Fed. Rep. Germany
J. Müller
Affiliation:
Siemens Research Laboratories, Otto-Hahn-Ring 6, 8000 München 83 Fed. Rep. Germany
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Abstract

Annealing of Beryllium implantations into epitaxial InP/InGaAs hetero-structures was investigated. Different ion energies were used to position the profile maximum in the InP cap, at the hetero-interface, or in the underlying InGaAs layer. By measuring the Be atom and carrier profiles, it is shown that annealing conditions necessary for optimum Be activation in the InP cap layer are compatible with good profile control for Be in InGaAs. There is a slight transfer of Be across the interface during annealing, which is important, if the pn-juntion is intended to be close to the hetero-interface.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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References

1. Descouts, B., Duhamel, N., Daoud-Ketata, K., Krauz, P. and Godefroy, S. J. Appl. Phys. 60, 450 (1986)Google Scholar
2. Descouts, B., Duhamel, N. and Gao, Y., Proc. ESSDERC'88, J. de Physique 49, C4437 (1988)Google Scholar
3. Humer-Hager, T., Treichler, R., Wurzinger, P., Tews, H., and Zwicknagl, P. to be published in J. Appl. Phys., June (1989)Google Scholar
4. Geva, M. and Seidel, T.E., J. Appl. Phys., 59(7), 2408 (1986)Google Scholar
5. Akahori, Y., Hata, S., Ikeda, M., Yuda, M., Kawaguchi, Y., and Uehara, S., Electronics Lett. 25, 37 (1989)Google Scholar
6. Häussler, W., Römer, D., Plihal, M., Siemens Res. & Dev. Rep. 17(4), 177 (1988)Google Scholar
7. Häussler, W., Proc. ESSDERC'87, Bologna, Italy, 121 (1987)Google Scholar
8. Wang, K.W., Appl. Phys. Lett. 51, 2127 (1987)Google Scholar
9. Ambridge, T. and Faktor, M.M., Inst. Phys. Conf. Ser. 24, 320 (1975)Google Scholar
10. Kuebart, W., Proc. E-MRS ‘86, Strasbourg, France, 245 (1986)Google Scholar
11. Vescan, L., Selders, J., Maier, M., Kräutle, H., Beneking, H., J. Cryst. Growth 67, 353 (1984)Google Scholar
12. Häussler, W., unpublished work (1987)Google Scholar
13. Strzoda, R., (private communication)Google Scholar
14. Gauneau, M., Chaplain, R., Rupert, A., Rao, E.V.K., Duhamel, N., J. Appl. Phys. 57(4), 1029 (1985)Google Scholar