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Ion Implantation In Linbo3;

Published online by Cambridge University Press:  21 February 2011

R. G. Wilson ,
D. M. Jamba  and
D. A. Betts
R. G. Wilson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
D. M. Jamba
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
D. A. Betts
Affiliation:
Charles Evans and Associates, San Mateo, CA 94402
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Abstract

Ion implantation is used to fabricate waveguides in LiNbO3;. We have implanted a variety of ions into LiNbO3; at energies from 100 to 300 keV and have been able to profile their depth distributions by secondary ion mass spectrometry. We report here their depth distributions and range parameters determined from Pearson IV fitting.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 24: Symposium B – Defect Properties and Processing of High-Technology Nonmetallic Materials , 1983 , 181
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Wei, D. T. Y., Lee, W. W., and Bloom, L. R., Appl. Phys. Lett. 25, 329 (1974).CrossRefGoogle Scholar
2. Destefanis, G. L., Gailliard, H. P., Ligeon, E. L., and Valette, S., J. Appl. Phys. 50, 7898 (1979).Google Scholar
3. Wenzlik, K., Heibei, J., and Voges, E., Phys. Stat. Sol. (a) 61, K207 (1980).CrossRefGoogle Scholar
4. Faik, A., Dawber, P. G., O'Connor, D. J.,and Townsend, P.D.,Radiat. Effects 64, 235 (1982).Google Scholar
5. Kurmer, J. P. and Tang, C.L., Appl. Phys. Lett. 42, 146 (1983).Google Scholar