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Ion Implantation Damage in CdS Crystals Using RBS/Channeling and Tem

Published online by Cambridge University Press:  25 February 2011

N.R. Parikh ,
D.A. Thompson ,
R. Burkova  and
V.S. Raghunathan
N.R. Parikh
Affiliation:
Department of Engineering Physics and Institute for Materials Research McMaster University, Hamilton, Ontario, Canada, L8S 4M1
D.A. Thompson
Affiliation:
Department of Engineering Physics and Institute for Materials Research McMaster University, Hamilton, Ontario, Canada, L8S 4M1
R. Burkova
Affiliation:
Department of Engineering Physics and Institute for Materials Research McMaster University, Hamilton, Ontario, Canada, L8S 4M1 Short term visitor from Inst. for Semiconductor Technology, Botevgrad, 2140 Bulgaria;
V.S. Raghunathan
Affiliation:
Department of Engineering Physics and Institute for Materials Research McMaster University, Hamilton, Ontario, Canada, L8S 4M1 On leave from the Reactor Research Centre, Kalpakkam, India
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Abstract

Implantation damage in single crystal of CdS produced by 60 keV Bi+ and 45 keV Ne+ at 50 K and at 300 K has been studied. Measurements of Cd disorder and dechanneling behaviour have been made by means of RBS/channeling for He ions ranging in incident energy from 1.0 to 2.8 MeV either along <0001> or <1120> axial channeling directions. The amount of disorder measured were two orders of magnitude lower than the calculated Cd disorder. Damage when analysed along the <0001> axis is larger than when analysed along the <1120> axis.Xmim values for the implanted crystals decreases as the EO increases, when analysed along <0001> direction. TEM observations of Bi implanted samples show that the dislocation loops of b = 1/3 <1120> are produced. Attempts have been made to correlate the RBS/channeling results with the defect strictures observed in microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 323
Copyright
Copyright © Materials Research Society 1984

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References

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