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Ion Implantation and Misfit Dislocation Formation in P/P+Silicon

Published online by Cambridge University Press:  10 February 2011

Petra Feichtinger ,
Hiroaki Fukuto ,
Rajinder Sandhu ,
Benjamin Poust  and
Mark S. Goorsky
Petra Feichtinger
Affiliation:
Dept of Materials Science and Engineering, University of California, Los Angeles, CA 90095.
Hiroaki Fukuto
Affiliation:
Dept of Materials Science and Engineering, University of California, Los Angeles, CA 90095.
Rajinder Sandhu
Affiliation:
Dept of Materials Science and Engineering, University of California, Los Angeles, CA 90095.
Benjamin Poust
Affiliation:
Dept of Materials Science and Engineering, University of California, Los Angeles, CA 90095.
Mark S. Goorsky
Affiliation:
Dept of Materials Science and Engineering, University of California, Los Angeles, CA 90095.
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Abstract

We determined that self implantation of pseudomorphically strained silicon epitaxial layers greatly attenuates strain relaxation. We employed highly boron doped 150 mm diameter silicon with a nominally un-doped, 2.5 μm thick epitaxial layer (p/p+). The compressively strained layer (mismatch ≈ 1.5 × 10−4) showed inhomogeneous relaxation after epitaxial growth, with misfits forming only near the wafer periphery. High temperature rapid thermal annealing was employed after ion implantation to study misfit dislocation nucleation and glide. Our results suggest that low dose ion implantation has a potential to reduce misfit dislocation propagation and nucleation in epitaxial thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 594: Symposium V – Thin Films - Stresses & Mechanical Properties VIII , 1999 , 37
Copyright
Copyright © Materials Research Society 2000

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References

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