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Ion Implantation and Annealing in III-V Multilayer Heterojunctions

Published online by Cambridge University Press:  25 February 2011

C. W. Farley  and
B. G. Streetman
C. W. Farley
Affiliation:
Department of Electrical and Computer Engineering, Microelectronics Research CenterUniversity of Texas at AustinAustin, Tx 78712
B. G. Streetman
Affiliation:
Department of Electrical and Computer Engineering, Microelectronics Research CenterUniversity of Texas at AustinAustin, Tx 78712
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Abstract

This paper reviews the status of implantation and annealing in III-V multilayer heterojunctions. The limitations on diffusion doping of multilayers are noted. Current heterojunction device applications for implantation are summarized. Issues relevant to the annealing of multilayers are discussed, including Si migration in modulation doped structures, the effectiveness of rapid annealing in reducing SI diffusion, and impurity enhanced diffusion in superlattices. The formation of damage in multilayers and the unique properties of strained multilayers are also discussed. Finally, implant activation studies are summarized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 21
Copyright
Copyright © Materials Research Society 1985

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References

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