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Ion Implant Activation and Redistribution in AlxGa1–xAs

Published online by Cambridge University Press:  25 February 2011

S. J. Pearton ,
W. S. Hobson ,
A. E. Von Neida ,
N. M. Haegel ,
K. S. Jonesf ,
N. Morrisft  and
B. J. Sealytt
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
W. S. Hobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
A. E. Von Neida
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
N. M. Haegel
Affiliation:
UCLA, Los Angeles, CA 90024
K. S. Jonesf
Affiliation:
University of Florida, Gainesville, FL 32611
N. Morrisft
Affiliation:
University of Surrey, Guildford, Surrey, UK
B. J. Sealytt
Affiliation:
University of Surrey, Guildford, Surrey, UK
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Abstract

The electrical activation characteristics of implanted Be, Mg, Si and S in AlxGa1–xAs (x = 0-1) were investigated as a function of ion dose for rapid annealing in the range 600-950°C. The apparent activation energy for electrical activity of these species increases with increasing AlAs mole fraction - for Be, the activation energy is 0.35eV for GaAs and 0.49eV for Al0.54Ga0.46 As. There is no evidence for pairing of Be and O in AlGaAs, in contrast to the situation for GaAs. Self-compensation is the predominant limiting mechanism for Si activation in AlGaAs as determined by the relative photoluminescence intensities of the SiGa-to-SiAs related transitions. No significant redistribution of implanted Si is observed for any AlAs mole fraction for rapid annealing (5 sec) up to 900°C, whereas S shows motion into the AlGaAs and no tendency to outdiffuse. By contrast, both Be and Mg display loss of the dopant to the surface, and little redistribution toward the bulk. Minimal damage is observed by transmission electron microscopy in as-implanted AlGaAs for Be or Si doses below the amorphization threshold. Upon annealing at the conditions for optimum activation, a high density of small dislocation loops is observed near the end of the ion range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 665
Copyright
Copyright © Materials Research Society 1990

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References

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