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Ion dose dependence on solid phase epitaxy of amorphous silicon carbide induced by ion implantation

Published online by Cambridge University Press:  11 February 2011

In-Tae Bae ,
Manabu Ishimaru  and
Yoshihiko Hirotsu
In-Tae Bae
Affiliation:
Department of Materials Science and Engineering, Osaka University, Osaka, Japan
Manabu Ishimaru
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan
Yoshihiko Hirotsu
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan
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Abstract

Amorphous silicon carbides (a-SiC) fabricated by Xe+ ion implantation into 6H-SiC (0001) to fluences of 1015 and 1016/cm2 have been annealed at 850 °C for 1 hour. Transmission electron microscopy (TEM) observations revealed that the 1015 Xe+/cm2 implanted sample was completely recrystallized, while most of the a-SiC remains in the 1016 Xe+/cm2 implanted sample. Pair-distribution function analyses of both of the as-implanted samples show that the peak intensity of Si-C heteronuclear bonds is higher and the peak intensities of Si-Si and C-C homonuclear bonds are lower in the 1015 Xe+/cm2 implanted sample, indicating that the atomistic structure of the 1015 Xe+/cm2 implanted sample is more chemically ordered than that of the 1016 Xe+/cm2 implanted sample. This result suggests that more chemically ordered atomistic structure of 1015 Xe+/cm2 implanted a-SiC leads to complete recrystallization during thermal annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K2.1
Copyright
Copyright © Materials Research Society 2003

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References

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