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Ion Channeling Techniques for Defect and Surface Studies*

Published online by Cambridge University Press:  15 February 2011

B. R. Appleton
B. R. Appleton*
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
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Abstract

The channeling and blocking phenomena are well enough understood that they can be combined with ion scattering or ion induced reactions to investigate defects and surface structures. A brief review is given of the origins of these phenomena, of associated concepts which are useful for defect and surface analysis, and of experimental constraints and requirements. Applications to selected problems are used to illustrate the advantages and limitations of these techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 97
Copyright
Copyright © Materials Research Society 1981

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract W–7405–eng–26 with Union Carbide Corporation.

References

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