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Ion Channeling and Blocking Study of Ultra-Thin NiSi2 Films Grown on Atomically Clean Si(111) Surfaces

Published online by Cambridge University Press:  26 February 2011

E. J. Van Loenen  and
J. F. Van Der Veen
E. J. Van Loenen
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
J. F. Van Der Veen
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
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Abstract

Epitaxial NiSi2 films of less than 40 Å thickness have been grown on atomically clean Si(111) surfaces. Ion channeling and blocking have been used to determine the morphology and orientation of these films, as well as the strain resulting from the lattice mismatch with the Si substrate. The films are found to be continuous for Ni coverages above 5×1015 atoms/cm2. For all coverages the films are (111) oriented but rotated 180° around the surface normal with respect to the substrate. The NiSi2-Si(111) interface has been probed directly by the ion beam and is found to be well ordered and atomically abrupt.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 361
Copyright
Copyright © Materials Research Society 1985

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