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Ion Channeling Analysis of Gallium Nitride Implanted with Deuterium

Published online by Cambridge University Press:  15 February 2011

W. R. Wampler  and
S. M. Myers
W. R. Wampler
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056, [email protected]
S. M. Myers
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056, [email protected]
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Abstract

Ion channeling and transmission electron microscopy were used to examine the microstructure of GaN implanted with deuterium (D) at high (>1 at. %) and low (< 0.1 at. %) D concentrations. At high concentrations, bubbles and basal-plane stacking faults were observed. Ion channeling showed the D was disordered relative to the GaN lattice, consistent with precipitation of D2 into bubbles. At low D concentrations, bubbles and stacking faults are absent and ion channeling shows that a large fraction of the D occupies sites near the center of the c-axis channel.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.73
Copyright
Copyright © Materials Research Society 1999

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