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Ion Channeling Analysis of GaAsxP1-X/Gap Strained-Layer Superlattices

Published online by Cambridge University Press:  22 February 2011

S. T. Picraux ,
R. M. Biefeld ,
G. C. Osbourn  and
W. K. Chu
S. T. Picraux
Affiliation:
Sandia National Laboratories
R. M. Biefeld
Affiliation:
Sandia National Laboratories
G. C. Osbourn
Affiliation:
Sandia National Laboratories
W. K. Chu
Affiliation:
University of North Carolina.
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Abstract

Axial ion channeling and backscattering with 2 MeV 4He are used to probe the strain in GaAs. 16P.84/GaP strained-layer superlattices (SLS) by two methods. The tetragonal distortions in the growth direction of SLS's give rise to alternating tilts in inclined crystal directions at each interface. In the first method the large increase in dechanneling along <110> directions containing the angular tilts is measured relative to the negligible increase in dechanneling along the <100> growth direction. This method provides a sensitive depth-dependent measure of strain but requires computer simulation for quantitative analysis. In the second method, channeling angular scans are used to directly measure the lattice strain by the shift in the <110> crystal direction in the top layer relative to the average <110> direction. These results demonstrate the validity of the strain accommodation model for the interpretation of the dechanneling and indicate that GaAsxP1-x/GaP SLS structures of high crystalline quality can be obtained with strains somewhat lower than that predicted theoretically from bulk lattice properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 477
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Picraux, S. T., Dawson, L. R., Osbourn, G. C. and Chu, W. K., Appl. Phys. Lett. (in press);Google Scholar
Picraux, S. T., Dawson, L. R., Osbourn, G. C., Biefeld, R. M. and Chu, W. K., Appl. Phys. Lett. (in press).Google Scholar
2. Chu, W. K., Picraux, S. T., Biefeld, R. M., Osbourn, G. C. and Ellison, J. A. (these proceedings).Google Scholar
3. Biefeld, R. M., Osbourn, G. C., Gourley, P. L. and Fritz, I. J., J. Electronic Materials 12, 903 (1983).Google Scholar
4. Chu, W. K., Saris, F. W., Chang, C. A., Ludeke, R. and Esaki, L., Phys. Rev. B 26, 1999 (1982).Google Scholar
5. Barrett, J. H., Appl. Phys. Lett. 40, 482 (1982).CrossRefGoogle Scholar
6. Barrett, J. H., Phys. Rev. B 28, 2328 (1983).CrossRefGoogle Scholar
7. Feldman, L. C., Mayer, J. W. and Picraux, S. T., Materials Analysis by Ion Channeling (Academic Press, NY, 1982) Chapters 4 and 5.Google Scholar