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Ion Channeling Analysis of Disorder*

Published online by Cambridge University Press:  15 February 2011

S. T. Picraux
S. T. Picraux*
Affiliation:
Sandia National Laboratoriest†, Albuquerque, New Mexico, 87185, USA
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Abstract

The use of ion channeling to characterize disorder in semiconductors is briefly reviewed. At high defect densities the ion channeling/backscattering technique can give the depth distribution of defects with a resolution ∼ 10 nm. Quantitative analysis of the defect depth profile requires that a single type of defect dominates the scattering of partiicles out of channeling trajectories. This scattering process is characterized by two defect-specific quantities: the direct scattering factor and the dechanneling cross-section. For impurity-associated defects the lattice location of the impurity atoms can be determined to within ∼ 0.1 Å by simultaneously measuring the impurity and host atom signals as a function of tilt angle about channeling directions. The channeling technique can detect a wide range of intrinsic defects including interstitials, dislocations, stacking faults, microtwins, and amorphous clusters. Examples of the application of channeling to study defects in silicon will be given for the cases: 1) hydrogen trapping at defects; 2) ion implantation doping; and 3) epitaxial growth of layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 135
Copyright
Copyright © Materials Research Society 1981

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Footnotes

†

A U. S. Department of Energy facility.

*

This work was supported by the Department of Energy, Division of Basic Energy Sciences, under contract DE-AC04-76-DP00789.

References

REFERENCES

1. Gemmell, D. S., Rev. Mod. Phys. 46, 129 (1974).Google Scholar
2. White, C. W., Wilson, S. R., Appleton, B. R., and Young, F. W., J. Appl. Phys. 51, 738 (1980).Google Scholar
3. Picraux, S. T., Brown, W. L., and Gibson, W. M., Phys. Rev. B6, 1382 (1972).Google Scholar
4. Picraux, S. T. and Vook, F. L., Phys. Rev. B18, 2066 (1978).Google Scholar
5. Westmoreland, J. E., Mayer, J. W., Eisen, F. H., and Welch, B., Radiation Effects 6, 161 (1970);Google Scholar
Westmoreland, J. E., PhD Thesis, Caltech, 1970.Google Scholar
6. Tompson, D. A., Walker, R. S., and Davies, J. A., Radiation Effects 32 135 (1977).Google Scholar
7. Csepregi, L., Mayer, J. W., and Sigmon, T. W., Appl. Phys. Lett. 29, 92 (1976);Google Scholar
Lau, S. S., Mayer, J. W., and Tseng, W. F. in “Handbook on Semiconductors” (Keller, S. P.) Vol. 3, Chap. 7 (1980).Google Scholar
8. Picraux, S. T., Follstaedt, D. M., Baeri, P., Campisano, S. U., Foti, G., and Rimini, E., Radiation Effects 49, 75 (1980).CrossRefGoogle Scholar
9. Foti, G., Nucl. Inst. and Methods (in press).Google Scholar
10. Picraux, S. T. and Rai-Choudhury, P., in Semiconductor Characterization Techniques, Ed. by Barnes, P. A. and Rozgoniji, G. A. (Electrochemical Society, Princeton, NJ, (1978) p. 447.Google Scholar
11. Ronikier-Polonsky, D., Desarmot, G., Housseau, N., and Quere, Y., Radiation Effects 27, 81 (1975).Google Scholar
12. Desarmot, D. and Quere, Y., Acta Metallurica (in press).Google Scholar
13. Chu, W. K., Mayer, J. W., and Nicolet, M. A., Backscattering Spectrometry (Academic Press, NY, 1978).CrossRefGoogle Scholar
14. Picraux, S. T. in New Uses of Ion Accelerators, Ed. by Ziegler, J. F. (Plenum Press, NY, 1975) p. 229.Google Scholar
15. Appleton, B. R. (these proceedings).Google Scholar
16. Chu, W. K. (these proceedings).Google Scholar
17. Feldman, L. C., Mayer, J. W. and Picraux, S. T., Channeling Analysis of Materials, (Academic Press, NY, to be published).Google Scholar
18. Picraux, S. T., Nucl. Inst. and Methods (in press).Google Scholar
19. Picraux, S. T., Vook, F. L., and Stein, H. J., Inst. Phys. Conf. Series No. 46, (Institute of Physics, London, 1979), p. 31.Google Scholar
20. Brice, D. K., Ion Implantation Range and Energy Deposition, (Plenum Press, NY 1975).Google Scholar
21. Thompson, D. A., Walker, R. S. and Davies, J. A., Radiation Effects 32, 135 (1977).CrossRefGoogle Scholar
22. Picraux, S. T., Knapp, J. A. and Rimini, E. (private communication).Google Scholar