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Ion Bombarment Effect on the Growth of Microcrystalline Germanium

Published online by Cambridge University Press:  28 February 2011

B. Drevillon ,
C. Godet  and
A. M. Antoine
B. Drevillon
Affiliation:
Equipe Synthnse de Couches Minces pour l'Energétique (ER 258), Laboratoire de Physique Nucléaire des Hautes Energies, Ecole Polytechnique, 91128 Palaiseau (France)
C. Godet
Affiliation:
also at: Laboratoire de Physico-Chimie des Rayonnements (UA 75), Université Paris-Sud, 91405 Orsay (France)
A. M. Antoine
Affiliation:
Equipe Synthnse de Couches Minces pour l'Energétique (ER 258), Laboratoire de Physique Nucléaire des Hautes Energies, Ecole Polytechnique, 91128 Palaiseau (France)
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Abstract

The influence of surface mobility on the growth of Ge films is studied as a function of preparation conditions. The positive ion bombardment during film deposition on chromium substrates is analyzed using an electrostatic analyzer. The dielectric functions of the films are measured over the range 1.7–4.5 eV using in-situ spectroscopic phase modulated ellipsometry (SPME). The spectra of microcrystalline germanium (μc-Ge) present a shoulder near 4.2 eV which corresponds to the E2. optical transition observed in single crystal germanium. For substrate temperatures greater than 150°C, a transition from a-Ge:H to μc-Ge appears when the ion kinetic energy exceeds a threshold energy Eth, around 120 eV. Eth decreases as a function of substrate temperature. The Eth value is found to be higher than the threshold value corresponding to the opposite transition, giving evidence of a substrate memory effect on the growth of μc-Ge. Kinetic ellipsometry measurements of the early stage of the μc-Ge deposition on chromium are accurately, modelled by microcrystalline nucleation at a 50 Å level. After 200 Å thickness, μc-Ge grows with an overlayer. The description of μc-Ge as a mixture of c-Ge, a-Ge:H and voids is discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 341
Copyright
Copyright © Materials Research Society 1987

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References

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