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Ion Bombardment Effects on the Growth of Rutile Phase of Reactively Sputtered TiO2 Thin Films

Published online by Cambridge University Press:  21 February 2011

D. Wicaksana ,
T. Tsujikawa ,
A. Kobayashi ,
K. Ono  and
A. Kinbara
D. Wicaksana
Affiliation:
Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113
T. Tsujikawa
Affiliation:
Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113
A. Kobayashi
Affiliation:
Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113
K. Ono
Affiliation:
Engineering Research Institute, The University of Tokyo, Bunkyo-ku, Tokyo 113, JAPAN
A. Kinbara
Affiliation:
Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113
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Abstract

Titania thin films grown by reactive bias sputtering were characterized. In order to investigate the role of energetic ion on the growth of crystalline phases of TiO2 thin films, we applied substrate biases during deposition. The structural properties were analyzed using X-ray diffractometry (XRD), and related to the optical properties of the films. The atomic composition was determined using Rutherford backscattening spectrometry (RBS).

Negative substrate bias, Vb, showed a significant influence on the phase formed composition and microstructure: Vb in the range of 15 and 60 V enhanced the growth of crystalline phases and the rutile dominated the phase composition. However, the quantity of rutile decreased when Vb was raised to 100 V. The excess of oxygen was shown in the films by RBS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 311: Symposium O – Phase Transformations in Thin Films–Thermodynamics and Kinetics , 1993 , 233
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Wicaksana, D., Kobayashi, A. and Kinbara, A., J. Vac. Sci. Technol. A 10, 1479 (1992).Google Scholar
2. Parker, J.C., Chang, H.L.M., Xu, J.J., and Lam, D. J., Mat. Res. Soc. Sympo. Proc. Vol. 168, 337 (1990).Google Scholar
3. Parker, J.C. and Siegel, R. W., J. Mater. Res. 5, 1246 (1990).Google Scholar
4. Hsu, L. S., Rujkorakarn, R., Sites, J. R., and She, C. Y., J. Appl. Phys. 59, 3475 (1986).Google Scholar
5. Fukushima, K. and Yamada, I., J. Appl. Phys. 65, 619 (1989).Google Scholar
6. Greene, J. E. and Barnett, S. A., J. Vac. Sci. Technol. 21, 285 (1982).Google Scholar
7. Chang, H. L. M., You, H., Gao, Y., Guo, J. and Sundgren, J. E., Thin Solid Films, 169, 299 (1989).Google Scholar
8. Geraghty, K. G. and Donaghey, L. F., J. Electrochem. Soc. 123, 1201 (1976).Google Scholar
9. Swanepoel, R., J. Phys. E 16, 1217 (1983).Google Scholar
10. Wicaksana, D., Master Thesis, The University of Tokyo (1993).Google Scholar
11. Petrov, I., Hultman, L., Sundgren, J. -E. and Greene, J. E., J. Vac. Sci. Technol. A 10, 265 (1992).Google Scholar
12. Petrov, I., Hultman, L., Helmerson, U., Sundgren, J.-E., and Greene, J.E., Thin Solid Films, 169, 299 (1989).Google Scholar
13. Brudnik, A., Czternastek, H., Zakrzewska, K., and Jachimowski, M., Thin Solid Films 199, 45 (1991).Google Scholar