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Ion Bombardment Effects on GaAs Using 100eV Nitrogen Ions

Published online by Cambridge University Press:  25 February 2011

W. M. Lau
W. M. Lau*
Affiliation:
Surface Science Western, University of Western Ontario, London, Ontario, Canada N6A 5B7
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Abstract

The ion bombardment effects of low energy molecular nitrogen ions (100eV) on GaAs have been investigated using in-situ polar angle dependent X-ray photoelectron spectroscopy. It was found that arsenic and gallium nitrides were formed as a result of the nitrogen ion bombardment. The ion bombardment also caused a depletion of arsenic in the near surface region. For example, with a dose of 6×1015 cm-2 of nitrogen molecular ions at 100eV, the surface structure can be described approximately as 1.5nm of Ga0.67A0.33N on GaAs. The ion bombardment moves the Fermi levels of both n-type and p-type GaAs to mid-gap. Heating the ion bombarded samples in a vacuum chamber to 500°C desorbs all arsenic nitrides but most of the gallium nitrides remain on the surface. The Fermi levels of both n-type and p-type are then stablized at about 0.4eV from the valence band maximum. A surface type-inversion of the n-type substrate is therefore induced by the nitrogen-ionbombardment/annealing treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 695
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Sze, S.M., Physics of Semiconductor Devices, 2nd ed. (Wiley-Interscience, New Yuork, 1981), pp.274–297.Google Scholar
2. Brillson, L.J., Viturro, R.E., Mailhiot, C., Shaw, J.L., Tache, N., McKinley, J., Margaritondo, G., Woodall, J.M., Kirchner, P.D., Pettit, G.D., and Wright, S.L., J. Vac. Sci. Technol. B6, 1263(1988).Google Scholar
3. Waldrop, J.R. and Grant, R.W., Appl. Phys. Lett. 52, 1794(1988).Google Scholar
4. Schmidt, M.T., Podlesnik, D.V., Yu, C.F., Wu, X., Osgood, R.M. Jr., and Yang, E.S., J. Vac. Sci. Technol. B6, 1436(1988).CrossRefGoogle Scholar
5. Skromme, B.J., Sandroff, C.J., Yablonovitch, E., and Gmitter, T., Appl. Phys. Lett. 51, 2022(1987).Google Scholar
6. Zhang, L.C., Cheung, S.K., Liang, C.L., and Cheung, N.W., Appl. Phys. Lett. 50, 445(1987).CrossRefGoogle Scholar
7. Zhang, L.C., Cheung, S.K., Liang, C.L., and Cheung, N.W., presented at the 45th Device Research Conf., Santa Barbara, CA, 1987.Google Scholar
8. Lau, W.M., Sodhi, R.N.S., and Ingrey, S.I.J., J. Vac. Sci. Technol. A6, 1371(1988).CrossRefGoogle Scholar
9. Hu, H-K., Fukuda, Y., Baldwin, R.A., Murray, P.T., and Rabalais, J.W., J. Chem. Phys. 72, 6158(1980).Google Scholar
10. Carter, G. and Colligon, J.S., Ion Bombardment of Solids (Elsevier, New York, 1968).Google Scholar
11. Scofield, J.H., J. Electron Spectrosc. Relat. Phenom. 8, 129(1976).CrossRefGoogle Scholar
12. Hofmann, S., in Practical Surface Analysis by Auger and X-ray photoelectron Spectroscopy, edited by Briggs, D. and Seah, M.P. (John Wiley & Sons, Chichester, 1983), pp. 141–179.Google Scholar