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Ion Beam Synthesis of Ge Nanocrystals Embedded in SiO2 Matrix

Published online by Cambridge University Press:  31 January 2011

Srinivasa Rao N ,
Anand Pathak ,
Kabiraj D ,
S A Khan ,
B K Panigrahi ,
K G M Nair  and
D K Avasthi
Srinivasa Rao N
Affiliation:
[email protected], School of Physics, University of Hyderabad, Hyderabad, A P, India
Anand Pathak
Affiliation:
[email protected], University of Hyderabad, Physics, School of Physics, University of Hyderabad, Hyderabad, A P, 500046, India, +91 40 23010181 / 23134316, +91 40 23010181 / 23010227
Kabiraj D
Affiliation:
[email protected], Inter University Accelerator Centre, New Delhi, Delhi, India
S A Khan
Affiliation:
[email protected], Inter University Accelerator Centre, New Delhi, Delhi, India
B K Panigrahi
Affiliation:
[email protected], Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, T N, India
K G M Nair
Affiliation:
[email protected], Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, T N, India
D K Avasthi
Affiliation:
[email protected], Inter University Accelerator Centre, New Delhi, Delhi, India
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Abstract

High fluences of low energy Ge+ ions were implanted into Si matrix. We have also deposited Ge and SiO2 composite films by using the Atom beam sputtering (ABS). The as implanted/as-deposited films were irradiated by Swift Heavy Ions (SHI) with various energies and fluences. These pristine and irradiated samples were subsequently characterized by XRD and Raman to understand the crystallization behavior. Raman studies of the films indicate the formation of Ge crystallites as a result of SHI irradiation. Glancing angle X-ray diffraction results also confirm the presence of Ge crystallites in the irradiated samples. Moreover, the crystalline nature of Ge improves with an increase in fluence. Rutherford back scattering was used to quantify the concentration of Ge in SiO2 matrix and the film thickness. These detailed results have been discussed and compared with the ones available in literature. The basic mechanism for crystallization induced by SHI in these films will be presented.

Keywords

x-ray diffraction (XRD)Raman spectroscopyion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1181: Symposium DD – Ion Beams and Nano-Engineering , 2009 , 1181-DD11-03
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

1 Canham L, T 1990 Appl. Phys. Lett. 57 1046 Google Scholar
2 Pavesi, L et al. 2000 Nature 408 440 Google Scholar
3 Tanagahara, T and Takeda, K, Phys Rev B 46, 15578 (1992)Google Scholar
4 Maeda, Y, Phys. Rev. B 5, 1658 (1995).Google Scholar
5 Nogami, M and Abe, Y, Appl. Phys. Lett. 65, 2545 (1994).Google Scholar
6 Zhang, Jia-Yu, Bao, Xi-Mao and Ye, Yong-Hong, Thin Solid Films 323, 68 (1998)Google Scholar
7 Cracium, V, Leborgne, C B, Nicholls, E J and Boyd, I W, Appl. Phys. Lett. 69, 1506 (1996).Google Scholar
8 Kolobov, A. V., Wei, S. Q., Yan, W. S., Oyanagi, H., Maeda, Y., and Tanaka, K. Phys. Rev. B 67, 195314 (2003).Google Scholar
9 Mishra, Y K, Mohapatra, S, Kabiraj, D, Mohanta, B, Lalla, N P, Pivin, J C and Avasthi, D K. Scripta Mater. 56, 629 (2007)Google Scholar
10 Cullity, B. D., Elements of X-ray Diffraction, 2nd. Ed., Addison-Wesley, reading, MA, 1978, p.102.Google Scholar
11 Ritcher, H, Wang, Z P, Ley, L, Solid State Commun. 39, 625 (1981)Google Scholar
12 Hayes, W., Loudon, R., Scattering of Light by crystals, Wiley, New York, 1978 Google Scholar
13 Giri, P.K., Kesavamoorthy, R., Bhattacharya, S., Panigrahi, B.K., Nair, K.G.M.. Materials Science and Engineering B 128, 201 (2006)Google Scholar
14 Giri, P K, Keasavamoorthy, R, Panigrahi, B K and Nair, K G M Nucl. Inst. and Meth. B 244, 56 (2006)Google Scholar
15 Toulemonde, M., Dufour, C., Paumier, E., Phys. Rev. B 46 (1992) 14362 Google Scholar