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Ion Beam Synthesis and Optical Properties of Zn and Zno Nanocrystals in Sio2 and Caf2 Substrates

Published online by Cambridge University Press:  15 February 2011

Y.C. Liu ,
R. Mu ,
H.Y. Xu ,
Y.M. Lu ,
D.Z. Shen ,
X.W. Fan ,
D. O. Henderson  and
C.W. White
Y.C. Liu
Affiliation:
Advanced Center for Optoelectronic Functional Materials Research, Northeast Normal University, Changchun 130024, PRC. Key Laboratory of Excited State Processes, CIOFMP-CAS, Changchun, China.
R. Mu
Affiliation:
Center for Photonic Materials and Devices, Fisk University, Nashville TN, USA
H.Y. Xu
Affiliation:
Key Laboratory of Excited State Processes, CIOFMP-CAS, Changchun, China.
Y.M. Lu
Affiliation:
Key Laboratory of Excited State Processes, CIOFMP-CAS, Changchun, China.
D.Z. Shen
Affiliation:
Key Laboratory of Excited State Processes, CIOFMP-CAS, Changchun, China.
X.W. Fan
Affiliation:
Key Laboratory of Excited State Processes, CIOFMP-CAS, Changchun, China.
D. O. Henderson
Affiliation:
Center for Photonic Materials and Devices, Fisk University, Nashville TN, USA
C.W. White
Affiliation:
Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TNUSA
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Abstract

Ion implantation was used to inject zinc ions into crystalline CaF2 and amorphous SiO2 substrates. Zn or ZnO nanoparticles were formed after annealing in a reducing (4% H2 + 96%Ar) or an oxidizing (10%O2 + 90% Ar ) atmosphere, respectively. When the sample was annealed in a reducing atmosphere, the absorption band at ∼ 5.3 eV for zinc implanted into SiO2 was attributed to zinc metal colloids. The absorption peak observed in the 4.3 – 4.7 eV region was due to the formation of ZnO nanocrystals, after the sample was annealed in an oxidizing environment. Both X-ray diffraction (XRD) and X-ray photospectroscopy (XPS) were used to confirm ZnO nanocrystal formation. For zinc implanted into CaF2, the as-formed ZnO nanocrystals were aligned with their [002] axes parallel to the [111] axis of the CaF2. Photoluminescence (PL) spectra showed UV and green emission from the zinc-implanted silica samples annealed under an oxygen atmosphere; however, no green emission was observed for ZnO formed in a CaF2 substrate. An additional emission was observed at ∼ 420 nm which might be due to F centers in CaF2 created by ion beam damage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 777: Symposium A – Nanostructuring Materials with Energetic Beams , 2003 , T7.8
Copyright
Copyright © Materials Research Society 2003

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References

1.For example: Siegel, R. W., IV International Conference on Advanced Materials, IUMRSICAM 95, Cancun Mexico, Aug. 27 - Sept. 1995.Google Scholar
2. Ritter, M.B., Awschlam, D.D., Shafer, W.M., Phys. Rev. Lett. 61, 966 (1988); J. Warnock, D.D. Awschalom, M.W. Shafer, Phys. Rev. Lett. 57, 1753 (1986); R. Mu, F. Jin, S.H. Morgan, D.O. Henderson and E. Silberman, J. Chem. Phys. 100, 7749 (1994); R. Mu and V.M. Malhotra, 44, 4296 (1991)Google Scholar
3. Mu, R., Xue, Y. and Henderson, D.O., Phys. Rev. B 53, 6041 (1996)Google Scholar
4. Mulvaney, P., Langmuir 12, 788 (1996)Google Scholar
5. Perenboom, J.A.A.J., Wyder, P. and Meier, F., Phys. Rep. 78, 173 (1981)Google Scholar
6. Hayashi, S., Jpn. J. Appl. Phys. 23, 665 (1984), and references therein.Google Scholar
7. White, C.W., Budai, J.D., Zhu, J.G., Withrow, S.P., Hembree, D.M. Jr, Henderson, D.O., Ueda, A., Tung, Y.S., Mu, R., Magruder, R.H., J. Appl. Phys. 79, 1876 (1996); R. Mu, D.O. Henderson, Y.S. Tung, A. Ueda, C. Hall, W.E. Collins, C.W. White, R.A. Zuhr and Jane G. Zhu, J. Vac. Sci. Technol. A14, 1482 (1996)Google Scholar
8. Bahnemann, D.W., Kormann, C. and Hoffmann, M.R., J. Phys. Chem. 91, 3789 (1987)Google Scholar
9. Haase, M., Weller, H. and Henglein, A., J. Phys. Chem. 92, 482 (1988), and references therein.Google Scholar
10. Mahamuni, S., Bendre, B.S., Leppert, V.J., Smith, C.A., Cooke, D., Risbud, S.H. and Lee, H.W.H., NanoStru. Mat. 7, 659 (1996)Google Scholar
11. Look, D.C., Reynold, D.D., Litton, C.W., Jones, R.L., Eason, D.B., and Cantwell, G., Appl. Phys. Lett. 81, 1830 (2002)Google Scholar
12. Zamfirescu, M., Kavokin, A., Gil, B., Malpuech, G., and Kaliteevski, M., Phys. Rev. B. 65, 161205 (2002); ibid Appl. Phys. Lett. 81, 748 (2002)Google Scholar
13. Auret, F.D., Goodman, S.A., Hayes, M., Legodi, M.J., Laarhoven, H.A. van, and Look, D.C., Appl. Phys. Lett. 79, 3074 (2001)Google Scholar
14. Ekimov, A. I., Efros, A. L., Onushchenko, A. A., Solid State Commun. 56, 921 (1985); L. E. Brus, J. Chem. Phys. 80, 4403 (1984)Google Scholar