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Ion Beam Mixing of Sb Schottky Contacts on n-Si

Published online by Cambridge University Press:  25 February 2011

J. B. Malherbe ,
K. P. Weimer ,
L. J. Bredell ,
E. Friedland  and
G. Myburg
J. B. Malherbe
Affiliation:
Department of Physics, University of Pretoria, Pretoria, South Africa
K. P. Weimer
Affiliation:
Department of Physics, University of Pretoria, Pretoria, South Africa
L. J. Bredell
Affiliation:
Department of Physics, University of Pretoria, Pretoria, South Africa
E. Friedland
Affiliation:
Department of Physics, University of Pretoria, Pretoria, South Africa
G. Myburg
Affiliation:
Department of Physics, University of Pretoria, Pretoria, South Africa
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Abstract

The I—V characteristics of as—deposited antimony Schottky contacts on silicon were extremely sensitive to interface conditions. This led to unpredictable results for the unimplanted contacts. After Si* implantation the contacts displayed more uniform I—V characteristics. Implantation led to higher values for the ideality constant, the series resistance and for the saturation current. The ideality factor seems to decrease at the higher implantation doses (ϕ ≥ 5×1014 Sb+cn−2), while no clear dose dependence patterns were observed for the saturation current and series resistance after implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 221
Copyright
Copyright © Materials Research Society 1990

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References

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