Hostname: page-component-6bf8c574d5-rwnhh Total loading time: 0 Render date: 2025-02-20T14:55:38.869Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion Beam Mixing of Multelayered Co-B Thin Films

Published online by Cambridge University Press:  25 February 2011

G. Choe  and
R.M. Walser
G. Choe
Affiliation:
Center for Materials Science and Engineering
R.M. Walser
Affiliation:
Center for Materials Science and Engineering Dept of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78712 J. JL. Herring Centennial Professor in Engineering
Get access

Abstract

Ion beam mixing (with 150 keV 1016 Ar ions/cm2) of multilayered Co-B films with various bilayer periods (BP = TCo + TB, TCo = 4 × TB), and layer thickness ratios, was studied to determine its utility, compared to sputtering, in producing morphological changes in amorphous thin films. All the ion beam mixed films were amorphous, but the morphologies of both the as-deposited and the ion beam mixed films varied with the BP. The in-plane, easy axis anisotropies of the films with the largest BP were obliterated by mixing, although their hard axis coercivities were unchanged. The anisotropy of the films with smaller BPs was increased by mixing. The results indicate that ion beam mixing is a potentially useful method of improving the properties of soft magnetic thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 233
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Kim, D.Y. and Walser, R.M., J. Appl. Phys. 64, 5676 (1988).Google Scholar
2 Valanju, A.P., Jeong, I.S., Kim, D.Y., and Walser, R.M., J. Appl. Phys. 64, 5443 (1988).Google Scholar
3 Valanju, A.P., Jeong, I.S., Kim, D.Y., and Walser, R.M., Mat. Res. Soc. Proc. 132, 173 (1989).Google Scholar
4 Metzdorf, W. and Wiehl, H.E., Phys. Stat. Sol. 17, 285 (1966).Google Scholar
5 Van Rossum, M., Nicolet, M-A. and Wilts, CM., J. Appl. Phys. 56, 1032 (1984).Google Scholar
6 Suran, G., Krishnan, R., Tessier, M., and Gerard, P., IEEE Trans, on Magn. MAG-20. 1423 (1984).Google Scholar
7 Krishnan, R. and Gerard, P., Solid State Comm. 50, 529 (1984).Google Scholar
8 Middelhoek, S., J. Appl. Phys. 37, 1276 (1966).Google Scholar
9 Kazama, N.S., Masumoto, T., and Mitera, M., J. Magn. Magn. Mat. 15, 1331 (1980).Google Scholar