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Ion Beam Irradiation of Metal Films on SiO2

Published online by Cambridge University Press:  25 February 2011

G. J. Clark ,
J. E. E. Baglin ,
F. M. d'Heurle ,
C. W. White ,
G. Farlow  and
J. Narayan
G. J. Clark
Affiliation:
Ibm Thomas J. Watson Research Center, Yorktown Heights, New York 10598;
J. E. E. Baglin
Affiliation:
Ibm Thomas J. Watson Research Center, Yorktown Heights, New York 10598;
F. M. d'Heurle
Affiliation:
Ibm Thomas J. Watson Research Center, Yorktown Heights, New York 10598;
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
G. Farlow
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
J. Narayan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
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Abstract

Ion beam irradiation of metal film/SiO2 interfaces causes reactions when the metals are those chemically capable of reducing SiO2. These reactions result in the formation of metal rich silicides in the region of the interface and an increase in the adhesion of the film to the substrate. For other nonreactive metals ion irradiation causes lateral transport of metal atoms resulting in the formation of an island structure. The results obtained by ion irradiation are compared with previous studies of high temperature thermal processing of metal films on SiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 55
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Pretorius, R., Harris, J. M. and Nicolet, M. A., Solid State Electronics 24, 667 (1978).Google Scholar
2. Kräutle, H., Chu, W. K., Nicolet, M. A., Mayer, J. W. and Tu, K. N., p. 193 in Applications of Ion Beams to Metals, ed. by Picraux, S. T., EerNisse, E. P. and Vook, F. L., Plenum Press, New York, 1974.Google Scholar
3. Kräutle, H., Nicolet, M. A. and Mayer, J. W., J. Appl. Phys. 45, 3304 (1974).Google Scholar
4. Tu, K. N., Ziegler, J. F. and Kircher, C. J., Appl. Phys. Lett. 23, 493 (1973.Google Scholar
5. Kräutle, H., Nicolet, M. A. and Mayer, J. W., Phys. Stat. Sol. 20, K33 (1973).Google Scholar
6.See for example, Tsaur, B. Y., Lau, S. S. and Hung, L. S., Nucl. Inst. Meth. 182/183, 1 (1981), and references contained therein.Google Scholar
7. Nagasawa, E., Morimoto, M. and Okabayashi, H. in “1982 Symposium on VLSI Technology, Digest of Technical Papers,” (Business Center for Academic Societies of Japan, Tokyo, 1982) p. 26.Google Scholar
8. Banwell, T., Liu, B. X., Golecki, I. and Nicolet, M. A., Nucl. Inst. Meth. 209/210, 125 (1983).Google Scholar
9. d'Heurle, F., Petersson, C. S. and Tsai, M. Y., J. Appl. Phys. 53, 8765 (1982).Google Scholar