Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-29T07:56:47.348Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion Beam Induced Amorphization and Crystallization Processes in Silicon and GaAs

Published online by Cambridge University Press:  28 February 2011

R. G. Elliman ,
J. S. Williams ,
S. T. Johnson  and
E. Nygren
R. G. Elliman
Affiliation:
CSIRO Chemical Physics, Clayton 3168, Australia.
J. S. Williams
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne 3000, Australia.
S. T. Johnson
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne 3000, Australia.
E. Nygren
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne 3000, Australia.
Get access

Abstract

Thin amorphous layers in crystalline Si and GaAs substates have been irradiated at selected temperatures with 1.5 MeV Ne+ ions to induce either epitaxial crystallization or amorphization. In Si, such irradiation can induce complete epitaxial crystallization of a 1000 A surface amorphous layer for temperatures typically >200°C whereas, at significantly lower temperatures, layer-by-layer amorphization results. Although epitaxial crystallization can also be stimulated in GaAs by ion irradiation at temperatures >65°C, the process is non-linear with ion dose and results in poor quality crystal growth for amorphous layers greater than a few hundred Angstroms in thickness. Layer-by-layer amorphization has not been observed in GaAs.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 471
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1) Elliman, R. G., Williams, J. S., Maher, D. M. and Brown, W. L.. Mat. Res. Soc. Symp. Proc. 51, 319 (1986).Google Scholar
2) Linnros, J., Holmen, G. and Svensson, B.. Phys. Rev. B 32, 2770 (1985).Google Scholar
3) Leiberich, A., Maher, D.M., Knoell, R.V. and Brown, W. L.. Presented at “Ion Beam Modification of Materials” conference. Catania, Italy (1986). To be published in Nucl. Instr. Meth.Google Scholar
4) Elliman, R. G., Williams, J. S., Johnson, S. T. and Pogany, A. P.. Nucl. Instr. Meth. B 15, 439 (1986).Google Scholar
5) Grimaldi, M. G., Paine, B. M., Nicolet, M. A. and Sadana, D. K.. J. Appl. Phys. 52, 4038 (1981).Google Scholar