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Ion Beam Etching System for Mercury Cadmium Telluride and III-V Compound Semiconductors
Published online by Cambridge University Press: 25 February 2011
Abstract
This paper describes a laboratory built ion beam etching system and its performance when used for etching Hg1-xCdxTe, GaAs and InP. The etching system provides a means for forming device mesas on a wide range of semiconductors without having to resort to wet chemical etches. The system uses a Kaufmann ion source, a rotating platform and two flow controllers to allow the variation of gas ratios and flows.
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- Copyright © Materials Research Society 1992