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Ion Beam assisted Deposition of Titanium Nitride

Published online by Cambridge University Press:  25 February 2011

G. K. Hubler ,
D. Vanvechten ,
E. P. Donovan  and
R. A. Kant
G. K. Hubler
Affiliation:
Naval Research Laboratory, Washington, DC, 20375 USA
D. Vanvechten
Affiliation:
Sachs-Freeman Associate at NRL
E. P. Donovan
Affiliation:
Naval Research Laboratory, Washington, DC, 20375 USA
R. A. Kant
Affiliation:
Naval Research Laboratory, Washington, DC, 20375 USA
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Abstract

The composition of titanium nitride films prepared by ion beam assisted deposition was studied as a function of the partial pressure of N2 gas in the deposition volume, and as a function of the impingement 'ratio of nitrogen ions (500 eV) to evaporated titanium atoms. The amount of nitrogen incorporated from the ambient gas was derived by subtraction of the fraction introduced by the ion beam. It is shown that the primary effects of ion bombardment are an increase in the sticking coefficient and a reduction in the number of active surface adsorption sites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 55
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Gibson, U.J., “Ion-Beam Processing of Optical Thin Films”, in Physics of Thin Films, Vol. 13 (Academic Press, 1987) p. 109.Google Scholar
2. Brighton, D.R. and Hubler, G.K., Nucl. Instrum. & Meth. In Phys. Res. B28 (1987) 527.CrossRefGoogle Scholar
3. MHller, K.-H., Phys. Rev. B, 35 (1987) 7906.Google Scholar
4. Cuomo, J.J., Harper, J.M.E., Guarnieri, C.R., Yee, D.S., Attanasio, L.J., Angilello, J. and Wu, C.T., J. Vac. Sci. & Technol. 20 (1982) 349.Google Scholar
5. Netterfield, R.P., SPIE 678 (1986) 14.Google Scholar
6. Weissmantel, C., Thin Sol. Films 32 (1976) 11.10.1016/0040-6090(76)90545-9CrossRefGoogle Scholar
7. Kant, R.A. and Sartwell, B.D., Mater. Sci. Engin. 90(1987)357.CrossRefGoogle Scholar
8. Hubler, G.K., Donovan, E.P., Vanvechten, D. and Kant, R.A., “Ion implantation and Plasma Processes for Industrial Applications”, (ASM, Metals Park, OH) to be published.Google Scholar
9. Van Vechten, D., Hubler, G.K. and Donovan, E.P., J. Vac. Sci. Technol. A6, (1988) 1934, and unpublished data.CrossRefGoogle Scholar
10. Biersack, J.P. and Haggmark, L.G., Nucl. Instrum. Methods 174 (1980) 257.CrossRefGoogle Scholar
11. Kant, R.A., unpublished dataGoogle Scholar
12. Barbie, T.W. Jr, Keith, D.L., Nagel, L. and Tiller, W.A., J. Electrochem. Soc. 131 (1983) 434.CrossRefGoogle Scholar