Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-29T07:36:20.540Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion Beam Assisted Deposition of Metal Films

Published online by Cambridge University Press:  25 February 2011

Kenji Gamo  and
Susumu Namba
Kenji Gamo
Affiliation:
Faculty of Engineering Science, and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
Susumu Namba
Affiliation:
Faculty of Engineering Science, and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
Get access

Abstract

The chtaracteristics of ion beam assisted deposition are discussed and compared with those of photon beam assisted deposition. Effects of various deposition parameters including ion species, beam energy and substrate temperature are discussed. Deposited films usually include impurities such as C and O. Inclusion of oxygen takes place by enhanced oxidation by background oxygen and may be reduced by depositing in a clean vacuum. Promising applications of maskless ion beam assisted deposition are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 531
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Shiokawa, T., Aoyagi, Y., Kim, P., Toyoda, K. and Namba, S.: Jpn. J. Appl. Phys. 23 L232 (1984).Google Scholar
2. Slingerland, H.N., Bohlander, J.H., Mast, K.D.v.d. and Koets, E.:Microcircuit Eng. 5 155 (1986).Google Scholar
3. Harriott, L.R., Wagner, A. and Fritz, F.: J. Vac. Sci. Technol. B4 181 (1986).CrossRefGoogle Scholar
4. Saitoh, K., Onoda, H., Morimoto, H., Katayama, T., Watakabe, Y. and Kato, T.: J. Vac. Sci. Technol. B6 1032 (1988).Google Scholar
5. Mashiko, Y., Morimoto, H., Koyama, H., Kawazu, S., Kaito, T. and Adachi, T.: 25th Annual Proc. 1987 Intern. Reliability Phys. Symp. (IEEE, 1987) 111.Google Scholar
6. Ochiai, Y., Gamo, K. and Nanta, S.: J. Vac. Sci. Technol. B3 67 (1985).Google Scholar
7. Ochiai, Y., Shihoyama, K., Shiokawa, T., Toyoda, K., Masuyama, A., Gamo, K. and namba, S.: J. Vac. Sci. Technol. B4 333 (1986).Google Scholar
8. Ochiai, Y., Shihoyama, K., Shiokawa, T., Toyoda, K., Masuyama, A., Gamo, K. and Namba, S.: Jpn. J. Appl. Phys. 25 L526 (1986).Google Scholar
9. Xu, Z., Gamo, K., Shiokawa, T. and Namba, S.: Nucl. Inst. Methods (to be published).Google Scholar
10. Gamo, K., Takakura, N., Takehara, D. and Namba, S.: Extended Abstracts 16th. Conf. Solid State Devices and materials (Jpn. Soc. Appl. Phys., 1984) 31.Google Scholar
11. Gamo, K., Takakura, N., Samoto, N., Shimizu, R. and Namba, S.: Jpn. J. Appl. Phys. 23 L293 (1984).Google Scholar
12. Bouree, J.E., Fliscstein, J. and Nissim, Y.I.: MRS Symp. Proc. vol.75 129 (1987).CrossRefGoogle Scholar
13. Shedd, G.M., Lezec, H., Dubner, A.D. and Melngailis, J.: Appl. Phys. Lett. 49 1584 (1986).CrossRefGoogle Scholar
14. Harriott, L.R., Cummings, K.D., Gross, M.E., Brown, W.L., Linnros, J. and Funsten, H.O.: MRS Symp. Proc. Vol.75 99 (1987).Google Scholar
15. Gamo, K., Takahara, D., Hamamura, Y., Tomita, M. and Namba, S.: Micelectronic Eng. 5 (1986) 163.Google Scholar
16. Gamo, K. and Namba, S.: MRSSymp. Proc. Vol.45 223 (1985).Google Scholar
17. Higashi, G.S. and Fleming, C.G.: Appl. Phys. Lett. 48 1051 (1986).Google Scholar
18. Yokoyama, H., Uesugi, F., Kishida, S. and Washio, K.: Appl. Phys. A37 25 (1985).Google Scholar
19. Kivall, G.A., Matthews, J.C. and Solanki, R.: MRS Symp. Proc. vol.75 145 (1987).CrossRefGoogle Scholar
20. Gross, M.E., Brown, W.L., Linnros, J., Harriott, L.R., Cummings, K.D. and Funsten, H.O.: MRS Symp. Proc. vol.75 91 (1987).Google Scholar
21. Thomas Baum, H.: MRS Symp. Proc. vol.75 141 (1987).CrossRefGoogle Scholar
22. Ro, J.S., Dubner, A.D., Thompson, C.V. and Melngailis, J.: J. Vac. Sci. Technol. B6 1043 (1988).Google Scholar
23. Reuter, W. and Wittmaack, K.: Appl. Surf. Sci. 5 221 (1980).Google Scholar
24. Miyake, H., Gamo, K., Yuba, Y. and Namba, S.: Jpn. J. Appl. Phys. (to be published).Google Scholar
25. Narum, D.H. and Pease, R.F.W.: J. Vac. Sci. Technol. B6 966 (1988).CrossRefGoogle Scholar
26. Sawaragi, H., Kasahara, H., Aihara, R., Gamo, K., Namba, S. and Shearer, M. Hassel: J. Vac. Sci. Technol. B6 974 (1988).Google Scholar