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Ion Beam Assisted Deposition of Cubic Boron Nitride Thin Films

Published online by Cambridge University Press:  28 February 2011

Daniel J. Kester  and
Russell Messier
Daniel J. Kester
Affiliation:
Pennsylvania State University, Materials Research Laboratory, University Park PA 16802
Russell Messier
Affiliation:
Pennsylvania State University, Materials Research Laboratory, University Park PA 16802
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Abstract

Boron nitride thin films were grown using ion beam assisted deposition. Boron metal was evaporated, and the depositing film was bombarded by nitrogen and argon ions. The films were characterized using Fourier transform infrared spectroscopy, electron diffraction, transmission electron microscopy, and Rutherford backscattering. The thin films were found to be cubic boron nitride, consisting of 100–200 Å crystallites with a small amount of an amorphous secondary phase. The best conditions for depositing cubic boron nitride were found to be a substrate temperature of 400°C, bombardment by a 50:50 mixture of argon and nitrogen with a bombarding ion energy of 500 eV and a ratio of bombarding ions to depositing boron atoms of from 1.0 to 1.5 ions per atom.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 721
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Wentorf, R. H. Jr, J. Chem. Phys. 26, 956 (1957).CrossRefGoogle Scholar
[2] Shimokawa, F., Kuwano, H., and Nagai, K., Proc. 9th Symp. on ISIAT 85 Tokyo (1985).Google Scholar
[3] Inagawa, K., Watanabe, K., Ohsone, H., Saitoh, K., and Itoh, A., J. Vac. Sci. Technol. A5, 2696 (1987).CrossRefGoogle Scholar
[4] Andoh, Y., Ogata, K., and Kamijo, E., Nucl. Instrum. Methods Phys. Res. B33. 678(1988).CrossRefGoogle Scholar
[5] Murakawa, M. and Watanabe, S., Surf. Coat. Technol. 43/44. 128(1990).CrossRefGoogle Scholar
[6] Saitoh, H., Hirose, T., Matsui, H., Hirotsu, Y., and Ichinose, Y., Surf. Coat. Technol. 39/40. 265(1989).CrossRefGoogle Scholar
[7] Geick, R. and Perry, C. H., Phys. Rev. 146, 543 (1966).CrossRefGoogle Scholar
[8] Gielisse, P. J., Mitra, S. S., Plendl, J. N., Griffis, R. D., Mansur, L. C., Marshall, R., and Pascoe, E. A., Phys. Rev. 155, 1039 (1967).CrossRefGoogle Scholar