Hostname: page-component-745bb68f8f-f46jp Total loading time: 0 Render date: 2025-02-10T08:05:35.848Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion and Electron Spectroscopy During Pulsed Laser Irradiation of Silicon

Published online by Cambridge University Press:  15 February 2011

J.P. Long ,
R.T. Williams ,
T.R. Royt ,
J.C. Rife  and
M.N. Kabler
J.P. Long
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
R.T. Williams
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
T.R. Royt
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
J.C. Rife
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
M.N. Kabler
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
Get access

Abstract

Ion mass spectrometry, charged particle yields, and kinetic energy distributions of electrons and ions are used to characterize silicon wafers and vacuum-cleaved silicon surfaces under conditions related to laser annealing. We find that alkali metals dominate the positive ion emission from chemically-cleaned wafers, a mass-72 peak tentatively identified as Si2O+ comprises the main ion emission from the cleaved surface, and ion and electron temperatures can be derived from the energy distribution curves although the Si2O+ emission implies more than a simple thermal evaporation process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 89
Copyright
Copyright © Materials Research Society 1983

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

Sachs Freeman and Assoc., Bowie, MD 20715

References

REFERENCES

1.Liu, J.M., Yen, R., Kurz, H., and Bloembergen, N., Appl. Phys. Lett. 39, 755 (1981).Google Scholar
2.Williams, R.T., Kabler, M.N., Long, J.P., Rife, J.C., and Royt, T.R., Proc. 1981 MRS Symposium on Laser and Electron Beam Interactions with Solids, edited by Appleton, B.R. and Celler, G.K. (North-Holland, New York, 1982), p. 97.Google Scholar
3.Bensoussan, M., Moisson, J.M., Stoesz, B., and Sebenne, C., Phys. Rev. B 23, 992 (1981).Google Scholar
4.Williams, R.T., Rife, J.C., Royt, T.R., and Kabler, M.N., J. Vac. Sci. Technol. 19, 367 (1981).Google Scholar
5.Williams, R.T., Royt, T.R., Rife, J.C., Long, J.P. and Kabler, M.N., J. Vac. Sci. Technol. 21, 509 (1982).Google Scholar
6.Zehner, D.M., White, C.W., Ownby, G.W., Appl. Phys. Lett. 36, 56 (1980).Google Scholar
7.Traum, M.M. and Woodruff, D.P., J. Vac. Sci. Technol. 17, 1202 (1980).Google Scholar
8.Wittmaack, K., Surface Science 112, 168 (1981).Google Scholar
9.Gilbert, T.L., Stevens, W.J., Schrenk, H., Yoshimine, M., Bagus, P.S., Phys. Rev. B 8, 5977 (1973).Google Scholar
See also the chemical trend in J. Phys. Chem. Reference Data, 6, Supplement (1977).Google Scholar