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Investigations of Silicon Nitride Films for Silicon Solar Cells

Published online by Cambridge University Press:  10 February 2011

J. R. Elmiger  and
M. Kunst
J. R. Elmiger
Affiliation:
Hahn-Meitner-Institut, Dep. Solare Energetik, Glienicker Str. 100, 14109 Berlin, Germany
M. Kunst
Affiliation:
Hahn-Meitner-Institut, Dep. Solare Energetik, Glienicker Str. 100, 14109 Berlin, Germany
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Abstract

Silicon nitride films on crystalline silicon were deposited in a low-temperature (< 400 °C ) Plasma Enhanced Chemical Vapour Deposition process. The deposition process is monitored with in situ Time Resolved Microwave Conductivity measurements leading to an on-line quality control of the deposited films. It is shown that at the start of the deposition there is a strong decrease of the lifetime of the measured transient signal due to plasma induced damage at the silicon surface. Afterwards an increase of the lifetime is observed due to passivation of the interface. For thin films (< 30 nm), the lifetime and the film composition depend on the film thickness. Furthermore, the film composition has a strong impact on the passivation of thick (100 nm ) silicon nitride films. The best passivation is obtained for almost stoichiometric films characterized by a refractive index of 1.95.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 129
Copyright
Copyright © Materials Research Society 1996

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