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Investigations of Microstructural Changes in Nickel Thin Films on Ionimplanted Silicon by Cross-Sectional Transmission Electron Microscopy with Intermittent Annealings in N2 Ambient

Published online by Cambridge University Press:  25 February 2011

S. W. Lu ,
C. W. Nieh ,
C. S. Chang  and
L. J. Chen
S. W. Lu
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
C. W. Nieh
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
C. S. Chang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
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Abstract

The feasibility of studying dynamical changes in nickel thin films on ion-implanted silicon thin films by cross-sectional transmission electron microscopy (XTEM) with intermittent annealings in N2 ambient up to 850 °C is demonstrated. Interactions of nickel thin films with oxidation induced stacking faults, fluorine bubbles and process-induced defects in ion implanted silicon are provided as examples. The technique may be applied to clarify a number of important issues encountered in the study of the reactions and diffusion of thin films and obtain informations otherwise unattainable.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 293
Copyright
Copyright © Materials Research Society 1987

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References

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