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Investigations of Metal-Silicon Interfaces by Time-of-Flight Atom Probe.

Published online by Cambridge University Press:  15 February 2011

Christopher Grovenor  and
George Smith
Christopher Grovenor
Affiliation:
Department of Metallurgy and Science of Materials, Parks Road,, Oxford,OXl 3PH, England.
George Smith
Affiliation:
Department of Metallurgy and Science of Materials, Parks Road,, Oxford,OXl 3PH, England.
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Abstract

The use of a Time-of-Flight Atom Probe in the analysis of silicon surfaces, and the interfaces between metals and silicon, promises to provide very accurate chemical analysis allied with structural information from Field Ion Microscopy images. This paper presents results on the analysis of silicon surfaces by this technique,showing that good spectra can be obtained without difficulty. Some preliminary experiments on the structure of such specimens after the deposition of thin layers of Pd and Ni will be described,concentrating on the analysis of the stoichiometry of the reacted layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 429
Copyright
Copyright © Materials Research Society 1982

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References

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