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Investigations of Excimer Laser Effects on CVD Diamond Growth

Published online by Cambridge University Press:  26 February 2011

Pehr E. Pehrsson ,
H. H. Nelson  and
F. G. Celii
Pehr E. Pehrsson
Affiliation:
Chemistry Division, Naval Research Laboratory, Washington D.C. 20375-5000
H. H. Nelson
Affiliation:
Chemistry Division, Naval Research Laboratory, Washington D.C. 20375-5000
F. G. Celii
Affiliation:
NRC/NRL Postdoctoral Fellow. Present address: M.S. 147, Materials Science Laboratory, Texas Instruments Inc., P.O. Box 655936, Dallas, Tx. 75265
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Abstract

We investigated UV laser irradiation as a method to modify the surface and gas phase chemistry in a diamond growth apparatus. In particular, attempts were made to reproduce reported laser-enhanced deposition. The variables included the laser wavelength and intensity, the precursor gas (and hence the gas-phase absorption), the flow rate, and the gas inlet orientation with respect to the filament. The samples were analyzed using optical microscopy, Scanning Electron Microscopy, the Scanning Auger Microprobe, and micro-Raman scattering. In all cases, the laser radiation suppressed or had no effect on diamond deposition in comparison to the adjacent unirradiated regions. The crystals that did grow in the irradiated regions were similar in size and morphology to those from the unirradiated areas, suggesting ablation or nucleation site blockage as possible deposition suppression mechanisms. The results suggest a novel method for diamond film patterning.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 179
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Irvine, S.J.C., Geiss, J., Mullin, J.B., Blackmore, G.W., Dosser, O.D., J. Vac. Sci. Tech. B 3(5), 1450 (1985)Google Scholar
2. Goto, Y., Yagi, T., Nagai, H., Mater. Res. Soc. Symp. Proc., 129, 213 (1988)Google Scholar
3. Kitihama, K., Hirata, K, Nakamatsu, H., Kawai, S., Fujimori, N., Imai, T., Yoshino, H, Doi, A., Appl. Phys. Lett., 49, 634 (1986); K. Kitihama, K Hirata, H. Nakamatsu, S. Kawai, N. Fujimori, T. Imai, Mater. Res. Soc. Symp. Proc., 75, 309 (1987)Google Scholar
4. Kitihama, K., Appl. Phys. Lett., 53, 1812 (1988)Google Scholar
5. Celii, F. G., Nelson, H.H., Pehrsson, P., J. Mater. Research, submitted for publicationGoogle Scholar
6. Unpublished resultsGoogle Scholar
7. Bechtel, J. H., J. Appl. Phys., 46, 1585 (1975)Google Scholar