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Investigations of CuInSe2 Thin Films and Contact

Published online by Cambridge University Press:  21 February 2011

S. Raud ,
Quat T. Vu ,
M-A. Nicolet ,
G. A. Pollock ,
K. W. Mitchell ,
J. A. Leavitt ,
M. D. Ashbaugh  and
L. C. Mcintyre
S. Raud
Affiliation:
California Institute of Technology, Pasadena, CA 91125
Quat T. Vu
Affiliation:
California Institute of Technology, Pasadena, CA 91125
M-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, CA 91125
G. A. Pollock
Affiliation:
Siemens Solar Industries, P.O.Box 6032, Camarillo CA, 93010
K. W. Mitchell
Affiliation:
Siemens Solar Industries, P.O.Box 6032, Camarillo CA, 93010
J. A. Leavitt
Affiliation:
Dept. of Physics, University of Arizona, Tucson, AZ 85721
M. D. Ashbaugh
Affiliation:
Dept. of Physics, University of Arizona, Tucson, AZ 85721
L. C. Mcintyre
Affiliation:
Dept. of Physics, University of Arizona, Tucson, AZ 85721
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Abstract

We study the properties of CuInSe2 thin films grown on glass and on Mo substrates. The investigation is carried out with X-ray diffraction, RBS, XTEM and SEM.

CuInSe2/Mo contact stability is investigated after annealing at 600°C. RBS reveals that this treatment induces an interdiffusion between the metal and the chalcopyrite. To clarify this reaction, we have investigated the individual thin-film couples upon annealing. RBS and X-ray diffraction reveal insignificant interaction between Mo/Cu and Mo/In, but Se reacts with Mo.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 187: Symposium J – Thin Film Structures and Phase Stability , 1990 , 101
Copyright
Copyright © Materials Research Society 1990

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References

References:

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