Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-29T06:56:44.576Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation on different organic semiconductor/organic dielectric interfaces in pentacene-based thin-film transistors

Published online by Cambridge University Press:  01 February 2011

Emanuele Orgiu ,
Mohammad Taki ,
Beatrice Fraboni ,
Simone Locci  and
Annalisa Bonfiglio
Emanuele Orgiu
Affiliation:
[email protected], University of Cagliari, Cagliari, Italy, DIEE, Department of Electrical nd Electronic Engineering, Piazza D'Armi, Cagliari, 09123, Italy, +39 070 675 5769, +39 070 675 5782
Mohammad Taki
Affiliation:
[email protected], University of Cagliari, DIEE, Department of Electrical and Electronic Engineering, piazza d'armi, Cagliari, 09123, Italy
Beatrice Fraboni
Affiliation:
[email protected], University of Bologna, Department of Physics, viale Berti Pichat 6/2, Bologna, 40127, Italy
Simone Locci
Affiliation:
[email protected], University of Cagliari, DIEE, Department of Electrical and Electronic Engineering, piazza d'armi, Cagliari, 09123, Italy
Annalisa Bonfiglio
Affiliation:
[email protected], University of Cagliari, DIEE, Department of Electrical and Electronic Engineering, piazza d'armi, Cagliari, 09123, Italy
Get access

Abstract

Organic Thin-Film Transistors (OTFTs) in top-contact configuration and Metal-Insulator-Semiconductor (MIS) structures with different organic dielectrics as the gate insulator have been fabricated using the same organic semiconductor layer, pentacene, in order to investigate the changes in the electrical behavior by varying the interface properties. A gold bottom gate electrode was sputtered on a glass substrate whereas gold source and drain were thermally evaporated onto the pentacene layer. Several organic dielectrics have been tested as insulating layers, namely were poly(vinyl alcohol) (PVA), polyvinyl alcohol with ammonium dichromate (PVAad) as a cross-linking agent, poly (4-vinyl phenol) (PVP), poly(dimethylsiloxane) (PDMS) and poly(methylsilsesquioxane) (pMSSQ). The interesting differences found out by varying the interface confirm that the chemical-physical interaction between semiconductor and dielectric is crucial for the conduction mechanisms of the charge carriers. In particular we observed that the electron traps can influence not only the electron transport, therefore allowing a more or less marked ambipolar behavior, but also affect the hole transport.

Keywords

organicdielectric propertiesdevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1029: Symposium F – Interfaces in Organic and Molecular Electronics III , 2007 , 1029-F02-03
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Yoon, M., Kim, C., Fachetti, A. and Marks, T. J., J. Am. Chem. Soc. 128, 12851 (2006)10.1021/ja063290dGoogle Scholar
[2] Orgiu, E., Manunza, I., Sanna, M., Cosseddu, P. and Bonfiglio, A., Thin Solid Films 516, 1462 (2008)10.1016/j.tsf.2007.03.157Google Scholar
[3] Jang, Y., Kim, D. H., Park, Y. D., Cho, J. H., Hwang, M., Cho, K., Appl. Phys. Lett. 88, 72101 (2006)10.1063/1.2173633Google Scholar
[4] Singh, T. B., Meghdadi, F., Gunes, S., Marjanovic, N., Horowitz, G., Lang, P., Bauer, S. and Sariciftci, N. S., Adv. Mater. 17, 2315 (2005)10.1002/adma.200501109Google Scholar
[5] Chua, L., Zaumseil, J., Chang, J., Ou, E., Ho, P., Sirringhaus, H. and Friend, R. H., Nature 434, 194 (2005)10.1038/nature03376Google Scholar
[6] Chou, W., Kuo, C., Cheng, H., Chen, Y., Tang, F., Yang, F., Shu, D. and Liao, C., Appl. Phys. Lett. 89, 112126 (2006)10.1063/1.2354426Google Scholar
[7] Knipp, D., Street, R. A., Voelkel, A., Ho, A., J. Appl. Phys. 93, 347 (2003)10.1063/1.1525068Google Scholar
[8] Steudel, S., Vusser, S. De, Jonge, S. De, Janssen, D., Verlaak, S., Genoe, P., Heremans, J., Appl. Phys. Lett. 85, 4400 (2004)10.1063/1.1815042Google Scholar
[9] Grimm, L., Hilke, K.-J. and Scharrer, E., J. Electrochem. Soc. 130, 1767 (1983)10.1149/1.2120089Google Scholar
[10] Shön, J. H. and Batlogg, , Journal of Applied Physics 89, 336 (2001)10.1063/1.1329667Google Scholar