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Investigation on C54 nucleation and growth by micro-Raman imaging

Published online by Cambridge University Press:  14 March 2011

Stefania Privitera ,
Francesco Meinardi ,
Simona Quilici ,
Francesco La Via ,
Corrado Spinella ,
Maria Grazia Grimaldi  and
Emanuele Rimini
Stefania Privitera
Affiliation:
INFM and Physics Department, Catania University, Corso Italia 57, 95129 Catania, Italy
Francesco Meinardi
Affiliation:
INFM and Materials Science Department, Milano-Bicocca University, Via Cozzi 53, 20125 Milano, Italy
Simona Quilici
Affiliation:
INFM and Materials Science Department, Milano-Bicocca University, Via Cozzi 53, 20125 Milano, Italy
Francesco La Via
Affiliation:
CNR-IMETEM, Stradale Primosole 50, 95121Catania, Italy
Corrado Spinella
Affiliation:
CNR-IMETEM, Stradale Primosole 50, 95121Catania, Italy
Maria Grazia Grimaldi
Affiliation:
INFM and Physics Department, Catania University, Corso Italia 57, 95129 Catania, Italy
Emanuele Rimini
Affiliation:
INFM and Physics Department, Catania University, Corso Italia 57, 95129 Catania, Italy
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Abstract

The processes of nucleation and growth of the C54 TiSi2 phase into the C49 phase in thin films have been studied by electrical measurements and micro-Raman spectroscopy. The Raman spectra have been acquired scanning large silicide areas (100×50 μm2) in step of 0.5 μm. Images showing the evolution of the C54 grains during the transition have been obtained for temperatures between 680 and 720 °C and the transformed fraction, the density and the size distribution of the C54 grains have been measured as a function of the temperature and the annealing time. The activation energies for the nucleation rate and the growth velocity have been determined obtaining values of 4.9 ± 0.7 eV and 4.5 ± 0.9 eV, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 611: Symposium C – Gate Stack & Silicide Issues in Silicon Processing , 2000 , C8.3.1
Copyright
Copyright © Materials Research Society 2000

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References

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