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Investigation on Abrasive Free Copper Chemical Mechanical Planarization for Cu/low k and Cu/ultra low k interconnects

Published online by Cambridge University Press:  01 February 2011

S. Balakumar ,
T. Haque ,
R. Kumar ,
A.S. Kumar  and
M. Rahman
S. Balakumar
Affiliation:
Institute of Microelectronics, 11, Science Park Road, Science Park II, Singapore117685
T. Haque
Affiliation:
Institute of Microelectronics, 11, Science Park Road, Science Park II, Singapore117685 Dept of Mechanical Engineering, National University of Singapore, Singapore
R. Kumar
Affiliation:
Institute of Microelectronics, 11, Science Park Road, Science Park II, Singapore117685
A.S. Kumar
Affiliation:
Dept of Mechanical Engineering, National University of Singapore, Singapore
M. Rahman
Affiliation:
Dept of Mechanical Engineering, National University of Singapore, Singapore
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Abstract

Abrasive Free Copper Chemical Mechanical Polishing (AF-CMP) was developed for Cu/low k materials. Blanket film Cu removal rate of 6000 Å/min with very less non-uniformity of 3% achieved for polishing pressure of 1.5 psi. CMP process window and lower critical pressure were identified with pattern wafers. Material removal mechanism was studied using surface morphology of Copper blanket wafers polished using different pressure, rotation rate and slurry flow rate. Material Removal Mechanism (wear mechanism) such as Chemical wear (etching) and mechanical wear (fatigue wear, particle adhesion wear and abrasion wear) have been found. The increase of slurry flow rate and relative velocity and the decrease of pressure give the dominance of chemical wear in material removal mechanism, and vice versa. Dishing control was achieved during Cu polish using different carrier/platen speed for Cu/SiLKTM patterned wafers. The cumulative distribution of the metal line-to-line leakage current measurements of wafers shows good performance and it is comparable to abrasive process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 867: Symposium W – Chemical-Mechanical Planarization-Integration, Technology and Reliability , 2005 , W1.7
Copyright
Copyright © Materials Research Society 2005

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References

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