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Investigation of the Transport Mechanism in Doped La-Based Manganite Thin Films by Traveling Wave Method

Published online by Cambridge University Press:  10 February 2011

L. Wang
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
S. Huang
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
J. Yin
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
X. Huang
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
J. Xu
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
Z. Liu
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
K. Chen
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
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Abstract

The traveling wave (TW) method has been utilized to investigate the transport mechanism in paramagnetic-insulator state of La0.75Sr0.11Ca0.14MnO3 films. The drift mobility of the films increased from 2.5 × 10−2 cm2/Vs at 310 K to about 9.2 × 10−2 cm2/Vs at 400 K. The Arrhenius behaviors of the conductivity and drift mobility indicate that the transport process in manganites above the Curie temperature is dominated by the thermally assisted hopping of small polarons.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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