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Investigation of the Si-rich silicon oxide by 3D atom probe tomography

Published online by Cambridge University Press:  01 February 2011

Etienne Talbot ,
Lardé Rodrigue ,
Fabrice Gourbilleau ,
Christian Dufour  and
Philippe Pareige
Etienne Talbot
Affiliation:
[email protected], United States
Lardé Rodrigue
Affiliation:
[email protected], Groupe de Physique des Matériaux, Université de Rouen, UMR CNRS 6634, Saint Etienne du Rouvray, France
Fabrice Gourbilleau
Affiliation:
[email protected], CIMAP, Caen Cedex 4, France
Christian Dufour
Affiliation:
[email protected], CIMAP, Caen cedex 4, France
Philippe Pareige
Affiliation:
[email protected], Groupe de Physique des Matériaux, Université de Rouen, UMR CNRS 6634, Saint Etienne du Rouvray, France
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Abstract

Silicon rich silicon oxide multilayers for optical devices have been investigated by laser assisted wide angle atom probe tomography. Three dimensional mapping of silicon nanoclusters multilayers was obtained. The composition of the different phases were deduced and compared to theoretical concentration. These results evidenced a size distribution of the Si clusters diameter and an incomplete phase separation between silica and silicon particles.

Keywords

sputteringSioptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1111: Symposium D – Rare-Earth Doping of Advanced Materials for Photonic Applications , 2008 , 1111-D06-08-MM09-08
Copyright
Copyright © Materials Research Society 2009

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