Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-05T15:49:51.316Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of the Optical Properties of epitaxial-lateral-overgrown GaN on R- and M- plane Sapphire

Published online by Cambridge University Press:  01 February 2011

Tobias Guhne ,
Zahia Bougrioua ,
Martin Albrecht ,
Phillippe Vennéguès ,
Mathieu Leroux ,
Marguerite Laügt ,
Sosse Ndiaye ,
Monique Teisseire ,
Luan Nguyen  and
Pierre Gibart
Tobias Guhne
Affiliation:
[email protected], CRHEA-CNRS, -, Rue Bernard Grégory, Valbonne, AL, 06560, France
Zahia Bougrioua
Affiliation:
[email protected], CRHEA-CNRS, Rue Bernard Grégory, Valbonne, 06560, France
Martin Albrecht
Affiliation:
[email protected], Institut für Kristallzüchtung, Max-Born-Strasse 2, Berlin, 12489, Germany
Phillippe Vennéguès
Affiliation:
[email protected], CRHEA-CNRS, Rue Bernard Grégory, Valbonne, 06560, France
Mathieu Leroux
Affiliation:
[email protected], CRHEA-CNRS, Rue Bernard Grégory, Valbonne, 06560, France
Marguerite Laügt
Affiliation:
[email protected], CRHEA-CNRS, Rue Bernard Grégory, Valbonne, 06560, France
Sosse Ndiaye
Affiliation:
[email protected], CRHEA-CNRS, Rue Bernard Grégory, Valbonne, 06560, France
Monique Teisseire
Affiliation:
[email protected];fr, CRHEA-CNRS, Rue Bernard Grégory, Valbonne, 06560, France
Luan Nguyen
Affiliation:
[email protected], CRHEA-CNRS, Rue Bernard Grégory, Valbonne, 06560, France
Pierre Gibart
Affiliation:
[email protected], CRHEA-CNRS, Rue Bernard Grégory, Valbonne, 06560, France
Get access

Abstract

Optical properties of GaN templates grown by the Epitaxial Lateral Overgrowth (ELO) technique along the nonpolar (1120) and the semipolar (1122) directions on R- and M-sapphire were investigated. Spatially resolved Cathodoluminescence (CL) was carried out in order to identify defect related transitions, to resolve their localization and to study the efficiency of ELO concerning defect filtration. The wing region of semipolar GaN is shown to be almost defect free with a luminescence spectrum dominated by the GaN emission at 3,472 eV. It is shown that the defect related emissions are localized in the seed, but different defects occur as well in the wing, especially in A-plane (nonpolar) GaN.

Keywords

optical propertiesIII-Vepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I12-04
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Craven, M.D., Lim, S.H., Wu, F., Speck, J.S., and DenBaars, S.P.. Appl.Phys.Lett., 81, (2002).Google Scholar
[2] Bougrioua, Z., Laügt, M., Vennéguès, P., Cestier, I., Gühne, T., Frayssinet, E., Gibart, P., and Leroux, M.. Phys.Stat.Sol. (a), 204, (2007).Google Scholar
[3] Liu, R., Bell, A., Ponce, F.A., Chen, C.Q., Yang, J.W., and Khan, M.A.. Appl.Phys.Lett., 86, (2005)Google Scholar