Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T15:42:10.086Z Has data issue: false hasContentIssue false

Investigation of the Optical Properties of Diamond-Like Carbon Films

Published online by Cambridge University Press:  10 February 2011

B. K. Kim
Affiliation:
Electrical Engineering Dept., Michigan State Univ., East Lansing, MI 48824, [email protected]
T. A. Grotjohn
Affiliation:
Electrical Engineering Dept., Michigan State Univ., East Lansing, MI 48824, [email protected]
Get access

Abstract

Hydrogenated-amorphous carbon films are deposited in a microwave ECR plasma reactor with an rf biased substrate holder using methane-argon and acetylene-argon gas mixtures. The film's optical properties are characterized versus deposition conditions including pressure (1–5 mTorr), rf induced bias (-100 to 20 volts), and argon/hydrocarbon flow ratio. The acetylene-argon discharges show that ion species formed from acetylene are more important than the argon ions, conversely, the methane-argon discharges showed that argon ions are a major ionic species in the deposition. The influence of the thickness of insulating substrates is studied and the feasibility of depositing multilayer a-C:H films with different film properties in each layer is demonstrated.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Weiler, M., Sattel, S., Giessen, T., Jung, K., Ehrhardt, H., Veerasamy, V. S. and Robertson, J., Phys. Rev. B 53, 1594 (1996) and references contained therein.Google Scholar
2. Zhang, G. F., Guo, L. J., Liu, Z. T., Xiu, X. K. and Zheng, X., J. Appl. Phys. 76, 705 (1994).Google Scholar
3. Rusman, I., Klibanov, L., Ben-Jacob, E. and Croitoru, N. in Applications of Diamond Films and Related Materials: Third International Conference. Ed. Feldman, A. et. al., 1995, pp. 796800.Google Scholar
4. Lieberman, M. A. and Lichtenberg, A. J., Principles of Plasma Discharges and Materials Processing. Wiley, 1994, p. 164.Google Scholar
5. Connell, G. A. N. in Amorphous Semiconductors ed. Brodsky, M. H., Springer-Verlag, (1985).Google Scholar