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Investigation of the Interface Integrity of the Thermally Stable Wn/GaAs Schottky Contacts

Published online by Cambridge University Press:  25 February 2011

J. Ding ,
B. Lee ,
K. M. Yu ,
R. Gronsky  and
J. Washburn
J. Ding
Affiliation:
Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, University of California Berkeley, California 94720
B. Lee
Affiliation:
Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, University of California Berkeley, California 94720
K. M. Yu
Affiliation:
Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, University of California Berkeley, California 94720
R. Gronsky
Affiliation:
Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, University of California Berkeley, California 94720
J. Washburn
Affiliation:
Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, University of California Berkeley, California 94720
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Abstract

WNx,/GaAs Schottky contacts formed by reactive sputtering were found to be thermally stable up to an annealing temprature of ∼9400°C. The interface morphology and structure of this contact under high temperature annealing conditions ( > 700°C ) have been investigated by transmission electron microscopy (TEM) and x-ray diffractometry techniques. For the as-deposited samples, the thin film had an amorphous structure. After annealing at high temperatures, the amorphous phase transformed to α-W and W2N phases. However, the contact interface remained thermally stable up to 850°C. Cross-sectional TEM micrographs revealed that annealing at temperatures above 850°C resulted in the formation of ‘pockets’ beneath the interface. This phenomenon has been correlated with the electrical properties of the contacts, e. g., an enhancement of the barrier height of the contact. Comparisons between the interface morphology of this system and other refractory metal nitride contacts (e. g., TiN/GaAs) are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 41
Copyright
Copyright © Materials Research Society 1989

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References

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