Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-17T16:15:18.959Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

Published online by Cambridge University Press:  15 February 2011

C. Essary ,
V. Craciun ,
J. M. Howard  and
R. K. Singh
C. Essary
Affiliation:
Materials Science and Engineering, University of Florida, Gainesville, FL 32611
V. Craciun
Affiliation:
Major Analytical Instrumentation Center, Materials Science and Engineering, University of Florida, Gainesville, Fl 32611
J. M. Howard
Affiliation:
Materials Science and Engineering, University of Florida, Gainesville, FL 32611
R. K. Singh
Affiliation:
Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Get access

Abstract

Hf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

Keywords

thin filmslaser ablationultraviolethafnium oxidehigh-k
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 780: Symposium Y – Advanced Optical Processing of Materials , 2003 , Y5.5
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

references

1. Wong, H. P., IBM J. Res. Develop. 46, 133 (2002)Google Scholar
2. Lee, B. H., Choi, R., Kang, L., Gopalan, S., Nieh, R., Onishi, K., Jeon, Y., Qi, W.J., Kang, C., and Lee, J. C., Electron Devices Meeting, 2000. IEDM Technical Digest. International, 2000 p. 39.Google Scholar
3. Manchanda, L., Green, M. L., van Dover, R. B., Morris, M. D., Kerber, A., Hu, Y., Han, J. P., Silverman, P. J., Sorsch, T. W., Weber, G., Donnelly, V., Pelhos, K., Klemens, F., Jacobson, D., Eng, J., Busch, B., and Schulte, H., Electron Devices Meeting, 2000. IEDM Technical Digest. International, 2000 p. 23.Google Scholar
4. Ramanathan, S., Muller, D. A., Wilk, G. D., Park, C. M., and McIntyre, P. C., Appl. Phys. Lett. 79, 3311 (2001)Google Scholar
5. Ramanathan, S., Park, C.M., and McIntyre, P. C., J. Appl. Phys. 91, 4521 (2002)Google Scholar
6. Kirsch, P. D., Kang, C. S., J. Lozano, Lee, J. C., and Ekerdt, J. G., J. Appl. Phys. 91, 4353 (2002)Google Scholar
7. Howard, J. M., Ultraviolet-assisted Processing of Dielectric Thin Films for Metal Oxide Semiconductor Applications, Ph.D. Thesis, University of Florida, 2002 p.111.Google Scholar
8. Lu, Z. H., McCaffrey, J. P., Brar, B., Wilk, G. D., Wallace, R. M., Feldman, L. C., and Tay, S. P., Appl. Phys. Lett. 71, 2764 (1997)Google Scholar