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Investigation of the Effect of Thermal History on Ring-OSF Formation in CZ-Silicon Crystals

Published online by Cambridge University Press:  10 February 2011

G.P. Kelly ,
M. Hourai ,
S. Umeno ,
M. Sano  and
H. Tsuya
G.P. Kelly
Affiliation:
Sumitomo Sitix Corp., Research and Development Center, Saga 849-0597, JAPAN
M. Hourai
Affiliation:
Sumitomo Sitix Corp., Research and Development Center, Saga 849-0597, JAPAN
S. Umeno
Affiliation:
Sumitomo Sitix Corp., Research and Development Center, Saga 849-0597, JAPAN
M. Sano
Affiliation:
Sumitomo Sitix Corp., Research and Development Center, Saga 849-0597, JAPAN
H. Tsuya
Affiliation:
Sumitomo Sitix Corp., Research and Development Center, Saga 849-0597, JAPAN
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Abstract

R-OSF are known to appear in CZ silicon crystals, but their nuclei are not observable in the as-grown state, and as-such have been difficult to characterize. Using a crystal grown with modifications in its pulling rate, this paper used lifetime in particular, coupled with the OPP, to investigate as-grown OSF nuclei size and density distribution and to discuss further how R-OSF are formed and how their formation interacts with that of other defects. It was found that faster cooling in the temperature range where large voids are formed (1070°C-970°C), which resulted in a larger residual vacancy concentration, caused the OSF ring to become wider, and the OSF-nuclei to become larger than normal in this area, while fast cooling in the temperature range where OSF are formed (990°C-900°C) is thought to suppress their formation, which thus resulted in smaller OSF-nuclei

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 21
Copyright
Copyright © Materials Research Society 1998

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