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Investigation of the Dopant Distribution in thin Epitaxial Silicon Layers by Means of Spreading Resistance Probe and Secondary Ion Mass Spectrometry

Published online by Cambridge University Press:  10 February 2011

Ilya Karpov ,
Catherine Hartford ,
Greg Moran ,
Subramania Krishnakumar ,
Ron Choma  and
Jack Linn
Ilya Karpov
Affiliation:
Mitsubishi Silicon America, Salem, OR
Catherine Hartford
Affiliation:
Solid State Measurements, Inc., Pittsburgh, PA
Greg Moran
Affiliation:
Mitsubishi Silicon America, Salem, OR
Subramania Krishnakumar
Affiliation:
Mitsubishi Silicon America, Salem, OR
Ron Choma
Affiliation:
Harris Semiconductor Sector, Palm Bay, FL
Jack Linn
Affiliation:
Harris Semiconductor Sector, Palm Bay, FL
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Abstract

In this paper, we examine the dopant distributions in 1.8 to 4 micron-thick boron- and phosphorus-doped epitaxial silicon layers. These layers were grown by chemical vapor deposition (CVD) on arsenic-, antimony-, or boron-doped (100)- and (111)-oriented substrates. We performed doping profile studies by means of local resistivity measurements using a spreading resistance probe (SRP). Chemical profiles of the dopants were also obtained using secondary ion mass spectrometry (SIMS).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 500: Symposium EE – Electrically Based Microstructural Characterization II , 1997 , 75
Copyright
Copyright © Materials Research Society 1998

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References

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