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Investigation of Resistivity Distributions in CdTe Crystals by Time Dependent Charge Measurements (TDCM)

Published online by Cambridge University Press:  26 February 2011

C. Eiche ,
W. Joerger ,
M. Fiederle ,
R. Schwarz ,
M. Salk ,
D. G. Ebling  and
K. W. Benz
C. Eiche
Affiliation:
Kristallographisches Institut, University of Freiburg, Freiburg, Germany
W. Joerger
Affiliation:
Kristallographisches Institut, University of Freiburg, Freiburg, Germany
M. Fiederle
Affiliation:
Freiburger Materialforschungszentrum (FMF), University of Freiburg, Freiburg, Germany
R. Schwarz
Affiliation:
Kristallographisches Institut, University of Freiburg, Freiburg, Germany
M. Salk
Affiliation:
Kristallographisches Institut, University of Freiburg, Freiburg, Germany
D. G. Ebling
Affiliation:
Freiburger Materialforschungszentrum (FMF), University of Freiburg, Freiburg, Germany
K. W. Benz
Affiliation:
Kristallographisches Institut, University of Freiburg, Freiburg, Germany
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Abstract

Spatially resolved resistivity measurements of CdTe crystals doped with Titanium (Ti) and Vanadium (V) were performed. From the temperature dependence of the resistivity the spatial variation of the thermal activation energy was deduced. Variations in axial as well as radial direction were observed and qualitatively explained by a combined segregation and compensation model. It is based on the deep donor levels of Ti and V at 0.95 eV below the conduction band.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 77
Copyright
Copyright © Materials Research Society 1995

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