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Investigation of Midgap Defects in GaAs Induced By Heat-Treatment (EL2), Electron-Irradiation, and Plastic Deformation

Published online by Cambridge University Press:  26 February 2011

Toru Haga ,
Masashi Suezawa  and
Koji Sumino
Toru Haga
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980, Japan
Masashi Suezawa
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980, Japan
Koji Sumino
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980, Japan
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Abstract

Thermal behavior of midgap defects generated in GaAs by different procedures has been followed by means of optical absorption measurements at low temperature. EL2 centers existing in as-grown crystals or generated by thermal annealing at temperatures lower than about 1000°C, which are characterized by a perfectly quenchable absorption at a wavelength of 1.0 μm, are found to diminish at temperature higher than 1000°C. The generation kinetics of EL2 centers has been traced during isothermal annealing of a crystal in which grown-in EL2 centers have previously been eliminated by annealing at 1200°C. The result of an analysis with the use of simplified chemical rate equations favors the model that an EL2 center is composed of an As antisite and two Ga vacancies. Both quenchable and unquenchable absorptions are associated with the midgap defects induced by plastic deformation or electron -irradiation. Isochronal annealing reveals that such defects are not identical with EL2 centers that are found in an as-grown crystal even if they accompany the quenchable absorption.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 387
Copyright
Copyright © Materials Research Society 1988

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References

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